Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Victor Sizov"'
Autor:
Victor Sizov, Rico Hentschel, Andre Wachowiak, Thomas Mikolajick, Anthony Calzolaro, Ifeanyi Francis Edokam
Publikováno v:
Semiconductor Science and Technology. 35:075011
Autor:
Ashay Chitnis, Cheng-Yu Hu, Wei-Sin Tan, Andrea Pinos, Takuma Yagi, Atsushi Nishikawa, Saad Murad, Lars Groh, Stephan Lutgen, Victor Sizov
Publikováno v:
physica status solidi c. 11:945-948
By means of our patented strain engineering technology, we achieved high crystal quality and near zero wafer bow on our 150 mm GaN-on-Si wafers. To show the feasibility of our wafers for HEMTs with large gate periphery, we investigated the buffer bre
Autor:
Victor Sizov, Michael Krieger, Markus Sickmoeller, Lars Groh, Takuma Yagi, Stephan Lutgen, Saad Murad, Heiko B. Weber, Sebastian Roensch
Publikováno v:
Materials Science Forum. :1180-1184
We present temperature dependent magnetoresistance measurements on the 2-dimensional electron gas of epitaxially grown AlGaN/GaN heterojunctions on silicon (Si). We report on the quantum correction to the classical conductance. In particular we found
Autor:
Victor Sizov, Stephan Lutgen, Michael Krieger, Lars Groh, Heiko B. Weber, Saad Murad, Takuma Yagi, Sebastian Roensch
Publikováno v:
Materials Science Forum. :502-505
The impact of the thickness of an AlN spacer in AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures on the Hall mobility was investigated in a range of 30 K - 340 K. The AlN spacer has a strong impact on the mobility at temperatures bel