Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Victor Malherbe"'
Autor:
Ali Jouni, Mathieu Sicre, Victor Malherbe, Bastien Mamdy, Thomas Thery, Jean-Marc Belloir, Dimitri Soussan, Serge De Paoli, Vincent Lorquet, Valérian Lalucaa, Cédric Virmontois, Gilles Gasiot, Vincent Goiffon
Publikováno v:
IEEE Transactions on Nuclear Science. 70:515-522
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8228cd5402b1370fd8d311523a669d7
https://doi.org/10.1109/tns.2023.3248521
https://doi.org/10.1109/tns.2023.3248521
Autor:
Judith Juvin, Victor Malherbe, Marie-Charlotte Belhomme, Stéphanie Castex, Agathe Martinez, Hassan Khartabil, Arnaud Haudrechy
Publikováno v:
New Journal of Chemistry. 46:17175-17182
The Overman rearrangement difficulties are tentatively explained using stereo-electronic considerations, helping chemists to understand their troubles in this process.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f807e67e047e88820ff55e9edecc7a0e
https://doi.org/10.1039/d2nj02468c
https://doi.org/10.1039/d2nj02468c
Autor:
Jean-Luc Autran, Valerie Bertin, Calogero Timineri, Capucine Lecat-Mathieu de Boissac, Jean-Marc Daveau, Serge De-Paoli, Gilles Gasiot, Anna Asquini, Fady Abouzeid, Victor Malherbe, Philippe Roche
Publikováno v:
IEEE Transactions on Nuclear Science. 68:1040-1044
This article presents a radiation-hardened Cortex-R4F system-on-chip prototype with integrated total ionizing dose (TID) dynamic compensation capabilities, designed and fabricated in 28-nm fully depleted silicon-on-insulator (FD-SOI) technology. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c40c8c08651ff67091e560d937096b9e
https://doi.org/10.1109/tns.2021.3071199
https://doi.org/10.1109/tns.2021.3071199
Autor:
Philippe Roche, Jean-Luc Autran, Capucine Lecat-Mathieu de Boissac, Fady Abouzeid, Victor Malherbe, Gilles Gasiot
Publikováno v:
IEEE Transactions on Nuclear Science. 68:850-856
In this article, we present the effects of voltage scaling and forward body biasing (FBB) on single-event effect sensitivity of a 28-nm ultra-thin body and box (UTBB) fully depleted silicon on insulator (FD-SOI) technology. Heavy-ion irradiation was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::876855c93feb198ef74420b4006cb63c
https://doi.org/10.1109/tns.2021.3071963
https://doi.org/10.1109/tns.2021.3071963
Publikováno v:
IEEE Transactions on Nuclear Science. 68:777-784
We report on alpha and neutron irradiation of 7.8 $\boldsymbol {\mu }\text{m}$ single-photon avalanche diodes (SPADs) manufactured in 40-nm CMOS. Displacement damage leads to persistent dark count rate hot spots, due to carrier generation centers int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a98eeef42ffa6868f3869fa745262dbd
https://doi.org/10.1109/tns.2021.3071171
https://doi.org/10.1109/tns.2021.3071171
Publikováno v:
IEEE Transactions on Nuclear Science. 68:603-610
In this article, we present Tool suIte for rAdiation Reliability Assessment (TIARA), an industrial version of a Monte Carlo single-event simulation platform, enabling fast and accurate soft error rate (SER) estimations. This tool is capable of simula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1634be76c52dc0eecaa0e08d7f3ab866
https://doi.org/10.1109/tns.2021.3071256
https://doi.org/10.1109/tns.2021.3071256
Autor:
Victor Malherbe, Francois Roy, Olivier Nier, Thomas Dalleau, Serge De Paoli, Philippe Roche, Jean-Luc Autran, Martin Dentan, Guo-Neng Lu
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2022, 69 (3), pp.534-541. ⟨10.1109/TNS.2022.3148925⟩
IEEE Transactions on Nuclear Science, 2022, 69 (3), pp.534-541. ⟨10.1109/TNS.2022.3148925⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f9935f2012cc61167465771d0110e3d5
https://hal.science/hal-04138209
https://hal.science/hal-04138209
Autor:
Guenole Lallement, Valerie Bertin, Dimitri Soussan, Victor Malherbe, Jean-Luc Autran, Gilles Gasiot, Capucine Lecat-Mathieu de Boissac, Philippe Roche, Fady Abouzeid
Publikováno v:
IEEE Transactions on Nuclear Science. 67:1326-1331
This article presents a digital dosimeter for on-chip total ionizing dose (TID) computation, designed and fabricated in 28- and 22-nm fully depleted silicon-on-insulator (FD-SOI) technologies. FD-SOI has improved, by far, the robustness to single eve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54b4231b6782e5314055d678432db462
https://doi.org/10.1109/tns.2020.2994435
https://doi.org/10.1109/tns.2020.2994435
Autor:
Aubin Antonsanti, Vincent Goiffon, François Roy, Alexandre Le Roch, Landen D. Ryder, Victor Malherbe, Philippe Roche, Olivier Nier, Cédric Virmontois, Jean-Marie Lauenstein
Publikováno v:
IEEE Transactions on Nuclear Science. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::951c08b2b48187b0ab3d82c4a80e132a
https://doi.org/10.1109/tns.2023.3262769
https://doi.org/10.1109/tns.2023.3262769
Autor:
Ali Jouni, Victor Malherbe, Bastien Mamdy, Thomas Thery, Mathieu Sicre, Dimitri Soussan, Vincent Lorquet, Serge De Paoli, Jean-Marc Belloir, Valerian Lalucaa, Cedric Virmontois, Gilles Gasiot, Vincent Goiffon
Publikováno v:
IEEE Transactions on Nuclear Science. :1-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6915eb181e9dee7dd4e01e46335a9e29
https://doi.org/10.1109/tns.2023.3257740
https://doi.org/10.1109/tns.2023.3257740