Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Victor M. Van Santen"'
Publikováno v:
IEEE Access, Vol 9, Pp 30687-30697 (2021)
Self-Heating Effects (SHE) is known as one of the key reliability challenges in FinFET and beyond. Large timing guard bands are necessary, which we try to reduce. In this work, we propose operating (biasing) processors at Zero-Temperature Coefficient
Externí odkaz:
https://doaj.org/article/8f0366cefdff49739a159823a5f9461a
Publikováno v:
IEEE Transactions on Computers. 71:947-958
FeFET is a promising technology for non-volatile on-chip memories. It is rapidly attracting an ever-increasing attention from industry. The advantage of FeFETs is full compatibility with the existing CMOS process beside their low power consumption. T
Autor:
Victor M. van Santen, Jose M. Gata-Romero, Juan Nunez, Rafael Castro-Lopez, Elisenda Roca, Hussam Amrouch
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Divya Praneetha Ravipati, Rajesh Kedia, Victor M. Van Santen, Jorg Henkel, Preeti Ranjan Panda, Hussam Amrouch
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 30:339-352
Autor:
Prasad Gholve, Payel Chatterjee, Chaitanya Pasupuleti, Hussam Amrouch, Narendra Gangwar, Shouvik Das, Uma Sharma, Victor M. van Santen, Souvik Mahapatra
Publikováno v:
Solid-State Electronics. 201:108586
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 67:1949-1953
Self-heating effect (SHE) is a major reliability concern in current and upcoming technology nodes due to its ability to increase the channel’s temperature of transistor and leading to degradations in the key electrical characteristics such as carri
Autor:
Animesh Basak Chowdhury, Wentian Jin, Benjamin Tan, Victor M. van Santen, Hussam Amrouch, Prashanth Krishnamurthy, Ilia Polian, Sheldon X.-D. Tan, Ramesh Karri, Farshad Khorrami
Publikováno v:
VTS
With technology scaling approaching atomic levels, IC test and diagnosis of complex System-on-Chips (SoCs) become overwhelming challenging. In addition, sustaining the reliability of transistors as well as circuits at such extreme feature sizes, for
Publikováno v:
VTS
Negative Capacitance Field-Effect Transistors (NCFET) are promising significant power reductions while maintaining performance due to their internal voltage amplification. However, the addition of the ferroelectric layer also introduces a higher gate
Publikováno v:
VLSI-DAT
With the introduction of FinFET transistors, the Self-Heating Effect (SHE) became a major reliability challenge. In this work, we present an automated SHE estimation method integrated within a circuit reliability framework. It allows designers to stu
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 66:1527-1531
Bias temperature instability (BTI) is a major reliability concern in the current and upcoming technologies. Current mitigation techniques mainly target circuit and system levels through reducing the stimuli that govern BTI. Such mitigation techniques