Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Victor M. Ustinov"'
Autor:
Sergey A. Blokhin, Andrey V. Babichev, Andrey G. Gladyshev, Leonid Ya. Karachinsky, Innokenty I. Novikov, Alexey A. Blokhin, Mikhail A. Bobrov, Nikolay A. Maleev, Vladislav V. Andryushkin, Dmitrii V. Denisov, Kirill O. Voropaev, Irina O. Zhumaeva, Victor M. Ustinov, Anton Yu. Egorov, Nikolay N. Ledentsov
Publikováno v:
IEEE Journal of Quantum Electronics. 58:1-15
Autor:
Sergey A. Blokhin, Andrey V. Babichev, Andrey G. Gladyshev, Innokenty I. Novikov, Alexey A. Blokhin, Mikhail A. Bobrov, Nikolay A. Maleev, Vladislav V. Andryushkin, Dmitrii V. Denisov, Kirill O. Voropaev, Victor M. Ustinov, Vladislav E. Bougrov, Anton Yu. Egorov, Leonid Ya. Karachinsky
Publikováno v:
Optical Engineering. 61
Autor:
Sergey A. Blokhin, Nikolay Ledentsov, Stanislav S. Rochas, Andrey V. Babichev, Andrey G. Gladyshev, Lukasz Chorchos, Oleg Y. Makarov, Leonid Ya Karachinsky, Innokenty I. Novikov, Alexey A. Blokhin, Mikhail A. Bobrov, Nikolay A. Maleev, Vladislav V. Andryushkin, Kirill O. Voropaev, Irina O. Zhumaeva, Victor M. Ustinov, Anton Yu. Egorov, Nikolay N. Ledentsov
Publikováno v:
Vertical-Cavity Surface-Emitting Lasers XXVI.
Autor:
Qi Wang, A. P. Vasil'ev, Victor M. Ustinov, Xiaomin Ren, Zhaoer Chai, Alexey E. Zhukov, Jiawei Cao, N. A. Maleev, Guoming Mao, Hao Liu
Publikováno v:
Materials Science in Semiconductor Processing. 79:20-23
We realized the excellent confinement of carriers in single-layer InAs quantum dots (QDs) via introducing two AlGaAs confining layers (CLs), and then fabricated the corresponding rolled-up InGaAs/GaAs QD microtubes by conventional photolithography an
Autor:
Victor M. Ustinov, Elizabeth S. Obolenskaya, Vladimir Kozlov, A. P. Vasil'ev, Dmitrii G. Pavelyev, Sergey V. Obolensky
Publikováno v:
IEEE Transactions on Terahertz Science and Technology. 8:231-236
Planar diode structures with small area active region (∼1 μ m2) based on highly doped GaAs/AlAs superlattices (SLs) are investigated. The possibility of effective application of such diodes in the terahertz frequency range is discussed. Monte Carl
Autor:
Zhaoer Chai, Alexey E. Zhukov, Jiawei Cao, Guoming Mao, Victor M. Ustinov, N. A. Maleev, Xiaomin Ren, Qi Wang, A. P. Vasil'ev, Hao Liu
Publikováno v:
Applied Physics B. 124
We report the observation of optically pumped continuous wave lasing in a self-rolled-up InGaAs/GaAs quantum dot microtube at room temperature. Single layer of InAs quantum dots (~ 2.6 ML coverage) in a GaAs well sandwiched by two AlGaAs barriers are
Autor:
Sergei A. Blokhin, Nikolai A. Maleev, Ksenia A. Fedorova, Edik U. Rafailov, Victor M. Ustinov, Ksenia K. Soboleva, Andrei Gorodetsky, Daniil A. Livshits
Publikováno v:
2016 International Conference Laser Optics (LO).
We demonstrate an ultra-compact, room-temperature, continuous-wave, broadly-tunable dual-wavelength InAs/GaAs quantum-dot external-cavity diode laser in the spectral region between 1150 nm and 1301 nm with maximum output power of 280 mW. This laser s
Autor:
Yurii Samsonenko, G. E. Cirlin, Peter Werner, Tonkikh Alexander, Vladimir G. Dubrovskii, Victor M. Ustinov, Nikolay E. Polyakov, Yurii G. Musikhin
Publikováno v:
International Journal of Nanoscience. :339-343
Formation of semiconductor quantum dots from a metastable wetting layer with the effective thickness well below the critical thickness is observed experimentally in the InAs / GaAs (100) and in the Ge / Si (100) systems. The observed effect is explai
Autor:
Victor M. Ustinov, Dieter Bimberg, Alexey P. Vasi'ev, Martin Geller, E. Stock, A. Marent, Alexey E. Zhukov, Elisaveta S. Semenova
Publikováno v:
physica status solidi c. 3:504-507
We studied the carrier storage and confinement of electrons and holes in InGaAs/GaAs QDs with deep level transient spectroscopy (DLTS) and time-resolved tunneling capacitance spectroscopy (TRTCS). For InGaAs/GaAs QDs with an additional AlGaAs barrier
Publikováno v:
physica status solidi (a). 202:396-402
Molecular beam epitaxy growth of InAs/InGaAs QD structures on GaAs substrates as well as fabrication and performance of long-wavelength QD edge-emitting lasers and VCSELs are discussed. 1.3 pm QD VCSELs were successfully fabricated from the structure