Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Victor L. Shaposhnikov"'
Publikováno v:
Solids, Vol 5, Iss 2, Pp 193-207 (2024)
The charge properties and regularities of mutual influence of the electro-physical parameters in a metal (M)/insulator (I)/two-dimensional crystal heterostructure were studied. In one case, the transition metal dichalcogenide (TMD) MoS2 was considere
Externí odkaz:
https://doaj.org/article/eaf23af0ac784646919376531d633c2a
Publikováno v:
Doklady of the National Academy of Sciences of Belarus. 65:40-45
The possibilities and conditions for modifying the band gap and the behavior of interband transitions under compressive and tensile strains in the crystal lattice of a molybdenum disulfide monolayer have been determined by theoretical modeling. It is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e30474a2e32e2f9d44bf553515144112
https://doi.org/10.29235/1561-8323-2021-65-1-40-45
https://doi.org/10.29235/1561-8323-2021-65-1-40-45
Autor:
A. L. Danilyuk, Victor E. Borisenko, T. I. Makovskaya, Victor L. Shaposhnikov, A. V. Krivosheeva
Publikováno v:
Russian Microelectronics. 49:507-515
Two-dimensional (2D) semiconductor crystals can be applied to further increase the efficiency and speed of field-effect transistors. Such transistors are free from some of the adverse effects present in the traditional MOS transistors when their size
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b2d71dc24278a173a641a37ab31f6ff
https://doi.org/10.1134/s1063739720070069
https://doi.org/10.1134/s1063739720070069
Autor:
A. L. Danilyuk, Tatyana I. Makovskaya, Victor L. Shaposhnikov, Anna V. Krivosheeva, Victor E. Borisenko
Publikováno v:
Proceedings of Universities. Electronics. 24:137-150
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebce638e8b8e44dbdbb8d861c900d51e
https://doi.org/10.24151/1561-5405-2019-24-2-137-150
https://doi.org/10.24151/1561-5405-2019-24-2-137-150
Publikováno v:
Journal of Materials Science
Journal of Materials Science, Springer Verlag, 2020, 55 (23), pp.9695-9702. ⟨10.1007/s10853-020-04485-x⟩
Journal of Materials Science, 2020, 55 (23), pp.9695-9702. ⟨10.1007/s10853-020-04485-x⟩
Journal of Materials Science, Springer Verlag, 2020, 55 (23), pp.9695-9702. ⟨10.1007/s10853-020-04485-x⟩
Journal of Materials Science, 2020, 55 (23), pp.9695-9702. ⟨10.1007/s10853-020-04485-x⟩
Understanding the possibility of band-gap engineering in multilayers composed of two-dimensional materials is extremely important for modeling and creation of novel electronic and photonic devices. Stacking of WS2 and WSe2 monolayers looks particular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48aa8d0f7b7ec980431f8302c29f7eac
https://hal.archives-ouvertes.fr/hal-03042367
https://hal.archives-ouvertes.fr/hal-03042367
Publikováno v:
17th International Conference on Nanosciences & Nanotechnologies (NN20), Nanotexnology
17th International Conference on Nanosciences & Nanotechnologies (NN20), Nanotexnology, Jul 2020, Thessaloniki, Greece. ⟨10.1016/j.matpr.2021.10.217⟩
17th International Conference on Nanosciences & Nanotechnologies (NN20), Nanotexnology, Jul 2020, Thessaloniki, Greece. ⟨10.1016/j.matpr.2021.10.217⟩
International audience; State-of-the-art technologies of fabrication of transition metal dichalcogenide monolayers like MeX2, where Me = Mo, W; X = S, Se, Te, and their based heterostructures are considered. Results of theoretical modeling are analyz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3114327830acd0deb2d6c2f4dc248192
https://hal.science/hal-03451177/document
https://hal.science/hal-03451177/document
Publikováno v:
Journal of Applied Spectroscopy. 84:581-587
A model for ab initio calculation of the phonon properties of three-component solid solutions of refractory-metal dichalcogenides was developed based on the assumption that displacements of the same type of chalcogen atoms and decoupled displacements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc9ee2d211a4e7ff29a977eb73b5a885
https://doi.org/10.1007/s10812-017-0514-3
https://doi.org/10.1007/s10812-017-0514-3
Publikováno v:
Science of Advanced Materials. 9:469-474
By means of ab initio calculations we demonstrate sizable anisotropy in surface energy of the gamma-WO3 (001), (010) and (100) surfaces. The (001) surface has the smallest surface energy followed b ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5caa4901ecf8cd52478bfed613008e6
https://doi.org/10.1166/sam.2017.2323
https://doi.org/10.1166/sam.2017.2323
Publikováno v:
International Journal of Nanoscience
International Journal of Nanoscience, World Scientific Publishing, 2019, 18 (03n04), pp.1940007. ⟨10.1142/S0219581X19400076⟩
International Journal of Nanoscience, 2019, 18 (03n04), pp.1940007. ⟨10.1142/S0219581X19400076⟩
International Journal of Nanoscience, World Scientific Publishing, 2019, 18 (03n04), pp.1940007. ⟨10.1142/S0219581X19400076⟩
International Journal of Nanoscience, 2019, 18 (03n04), pp.1940007. ⟨10.1142/S0219581X19400076⟩
An impact of positions of Te atoms substituting W atoms in two-dimensional WS2/WSe2 heterostructures on their electronic properties is investigated by theoretical simulation. The substitution of W by Te tends to reduce the energy band gap and can lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6f6951536244971b1e356fcc654dfc9
https://hal.archives-ouvertes.fr/hal-03144479
https://hal.archives-ouvertes.fr/hal-03144479
Publikováno v:
Journal of Applied Spectroscopy. 83:1035-1038
The results from calculation of the energy spectra and densities of states of phonons in bulk and two-dimensional crystals of monomolecular thickness from molybdenum disulfide and ditelluride are presented. They demonstrate the dominant role of the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d7258671f8c09ac43f192929decdef1
https://doi.org/10.1007/s10812-017-0403-9
https://doi.org/10.1007/s10812-017-0403-9