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pro vyhledávání: '"Victor Joseph Silvestri"'
Publikováno v:
Journal of Electronic Materials. 4:429-444
A chemical vapor deposition process for depositing dielectric films of aluminum oxynitride is described. AlCl3, CO2 and NH3 were employed as the reactive gases in a nitrogen carrier. Films were grown from the mixed gases at 770 and 900°C in a resist
Publikováno v:
Journal of Electronic Materials. 4:409-427
Transmission electron microscopy (TEM) studies of films prepared in the AlN-Al2O3 pseudobinary system by chemical vapor deposition (as described in a companion paper entitled, “Chemical Vapor Deposition of AlxOyNz Films”) indicates that four diff