Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Victor Hugo Mendez-Garcia"'
Autor:
Victor Hugo Mendez-Garcia, Ramon Escobar-Galindo, LETICIA ESPINOSA, Javier Alejandro Berumen Torres, José de Jesús Araiza, ARTURO A. ORTIZ-HERNANDEZ, José Juan Ortega
Publikováno v:
Digital.CSIC. Repositorio Institucional del CSIC
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ZnO p-type thin films were deposited by dual acceptor co-doping using nitrogen and silver via DC reactive magnetron co-sputtering. As precursor material were used a Zn and an Ag metallic targets with a purity of 99.99%. X-ray energy dispersive spectr
Autor:
Fernando Avelar-Muñoz, Roberto Gómez-Rosales, Arturo Agustín Ortiz-Hernández, Héctor Durán-Muñoz, Javier Alejandro Berumen-Torres, Jorge Alberto Vagas-Téllez, Hugo Tototzintle-Huitle, Víctor Hugo Méndez-García, José de Jesús Araiza, José Juan Ortega-Sigala
Publikováno v:
Micromachines, Vol 15, Iss 6, p 800 (2024)
p-type Ag-N dual acceptor doped ZnO thin films with long electrical stability were deposited by DC magnetron reactive co-sputtering technique. After deposition, the films were annealed at 400 °C for one hour in a nitrogen-controlled atmosphere. The
Externí odkaz:
https://doaj.org/article/61de1a216a284cfc8d692873807aa3c4
Publikováno v:
Journal of Crystal Growth. :518-523
The growth mode of ZnSe epilayers prepared by pulsed molecular beam epitaxy (MBE) on Si(1 1 1) substrates, irradiated with a plasma of nitrogen (N-plasma) prior to the deposition, was compared to that of ZnSe epilayers prepared by conventional MBE di
Autor:
MAXIMO LOPEZ LOPEZ, Esteban Cruz-Hernandez, Victor Hugo Mendez-Garcia, LETICIA ESPINOSA, Reyna Mendez-Camacho
Publikováno v:
AIP Advances, Vol 6, Iss 6, Pp 065023-065023-6 (2016)
Energetically unstable crystalline surfaces, among their uses, can be templates for the growth of periodic arrays of one-dimensional (1D) nanoscale structures. However, few studies have explored self-assembled faceting on high-index (HI) planes insid
Publikováno v:
Electronics Letters. 34:1791
The authors have achieved a substantial improvement in the ZnSe molecular beam epitaxy of Si(111) by irradiating the substrate surface with a flux of nitrogen free radicals (N*) prior to growth. This new substrate treatment induced an initial two-dim
Autor:
Irving Eduardo Cortes-Mestizo, Edgar Briones, Joel Briones, Ravindranath Droopad, Manuel Perez-Caro, Stefan McMurtry, Michel Hehn, François Montaigne, Victor Hugo Mendez-Garcia
Publikováno v:
Japanese Journal of Applied Physics; Jan2016, Vol. 55 Issue 1, p1-1, 1p