Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Vickram, R."'
Autor:
Prabakaran, G., Vickram, R., Velmurugan, K., Immanuel David, C., Prince Makarios Paul, S., Suresh Kumar, Raju, Almansour, Abdulrahman I., Perumal, Karthikeyan, Abiram, A., Prabhu, J., Nandhakumar, R.
Publikováno v:
In Food Chemistry 30 November 2022 395
Autor:
Velmurugan, K., Vickram, R., Jipsa, C.V., Karthick, R., Prabakaran, G., Suresh, S., Prabhu, J., Velraj, G., Tang, L., Nandhakumar, R.
Publikováno v:
In Food Chemistry 30 June 2021 348
Autor:
Prabakaran, G., Velmurugan, K., Vickram, R., David, C. Immanuel, Thamilselvan, A., Prabhu, J., Nandhakumar, R.
Publikováno v:
In Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 5 February 2021 246
Autor:
Velmurugan, K., Vickram, R., Karthick, R., Jipsa, C.V., Suresh, S., Prabakaran, G., Prabhu, J., Velraj, G., Nandhakumar, R. *
Publikováno v:
In Journal of Photochemistry & Photobiology, A: Chemistry 1 October 2020 401
Autor:
Vathulya, Vickram R.
Thesis (Ph. D.)--Lehigh University, 1999.
Includes vita. Includes bibliographical references (leaves 119-126).
Includes vita. Includes bibliographical references (leaves 119-126).
Autor:
Vathulya, Vickram R *, White, Marvin H
Publikováno v:
In Solid State Electronics 2000 44(2):309-315
Autor:
Vickram R. Vathulya, Marvin H. White
Publikováno v:
Solid-State Electronics. 44:309-315
In this work, a reduced thermal budget processing scheme using aluminum as the p -well dopant is investigated for the fabrication of the power DIMOS (Double Implanted MOSFET) in 4H and 6H-SiC in an effort to improve the on-state conduction. The on-st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0be8436e683520be036593cd202ff8ad
https://doi.org/10.1016/s0038-1101(99)00237-3
https://doi.org/10.1016/s0038-1101(99)00237-3
Publikováno v:
Microelectronic Engineering. 36:175-178
A marked difference is observed for the initial oxidation rates of 6HSiC (silicon face) obtained with oxygen and argon as carrier gases in a wet oxidation process. A modified Deal-Grove model with surface and bulk reaction constants is presented t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4011409c422331a6661973a3de1f0c9c
https://doi.org/10.1016/s0167-9317(97)00042-7
https://doi.org/10.1016/s0167-9317(97)00042-7
Publikováno v:
Applied Physics Letters. 73:2161-2163
Thermal oxides on p-type silicon carbide exhibit high densities of interface states and fixed charge. Understanding the effect of the oxide composition on the electrical properties is imperative to improve the quality of oxides on p-type silicon carb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f6b7deb909bebb5a12711353a338e06
https://doi.org/10.1063/1.122562
https://doi.org/10.1063/1.122562
Autor:
Vathulya, Vickram R., White, Marvin H.
Publikováno v:
IEEE Transactions on Electron Devices. Nov2000, Vol. 47 Issue 11, p2018. 6p. 2 Black and White Photographs, 1 Chart, 8 Graphs.