Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Vibhuti Chauhan"'
Publikováno v:
IEEE Transactions on Electron Devices. 69:4717-4724
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eb4bea6700bd12c7fa3b61f7d5dca6b
https://doi.org/10.1109/ted.2022.3186272
https://doi.org/10.1109/ted.2022.3186272
Publikováno v:
Silicon. 15:243-249
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b162b2cc67ff3d603626148aa6d7a76
https://doi.org/10.1007/s12633-022-01993-0
https://doi.org/10.1007/s12633-022-01993-0
Autor:
Vibhuti Chauhan, Dip Prakash Samajdar
Publikováno v:
2023 IEEE Devices for Integrated Circuit (DevIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a97d32bea8d0a904ad099471043b2aa4
https://doi.org/10.1109/devic57758.2023.10135009
https://doi.org/10.1109/devic57758.2023.10135009
Publikováno v:
IEEE Transactions on Electron Devices. 68:5204-5210
We propose and analyze a dielectric modulated (DM) negative capacitance (NC) fin-field effect transistor (FinFET) based biosensor for efficient and label-free detection of biomolecular entities. For the first time, the NC effect on bio-sensing owing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6251851c49c6d27435fbd834d5f87e8
https://doi.org/10.1109/ted.2021.3107368
https://doi.org/10.1109/ted.2021.3107368
Publikováno v:
Tailored Functional Materials ISBN: 9789811925719
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10e38e23ea30e7e92ca683bb7337bd62
https://doi.org/10.1007/978-981-19-2572-6_38
https://doi.org/10.1007/978-981-19-2572-6_38
Autor:
Vibhuti Chauhan, Dip Prakash Samajdar
Publikováno v:
Semiconductor Science and Technology. 38:045012
Device reliability issues originating from interface traps or bias temperature instability has been of great concern in emerging devices such as negative capacitance (NC)-fin field effect transistor (FinFET), gate-all-around field-effect transistor e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62ac084b3b3ad4402c5f6fa7a7d5abbc
https://doi.org/10.1088/1361-6641/acb8d3
https://doi.org/10.1088/1361-6641/acb8d3
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 68(12)
In this letter, for the first time, we investigate the role of Ferroelectric (FE) spacer in a negative capacitance (NC) FinFET. Using well-calibrated TCAD models, we found that instead of placing a dielectric (DE) spacer, if we use an FE spacer, enha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5b151434713ce4412ffced51ece560f
https://pubmed.ncbi.nlm.nih.gov/34280095
https://pubmed.ncbi.nlm.nih.gov/34280095
Autor:
Vibhuti Chauhan, Dip Prakash Samajdar
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 68(10)
In the contemporary era of Internet-of-Things (IoT), there is an extensive search for competent devices which can operate at ultralow voltage supply. Due to the restriction of power dissipation, a reduced sub-threshold swing-based device appears to b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6534af1bab0c5d8d55ce7a6a9a22421
https://pubmed.ncbi.nlm.nih.gov/34236962
https://pubmed.ncbi.nlm.nih.gov/34236962
Publikováno v:
Semiconductor Science and Technology. 37:085018
Negative capacitance (NC) obtained from the ferroelectric polarization switching is a widely adopted approach for the realization of low power, high-performance devices. In this paper, for the first time, we have developed a 3D quasi-analytical model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8707859b0e294cce50f8f47de415a5b6
https://doi.org/10.1088/1361-6641/ac79c6
https://doi.org/10.1088/1361-6641/ac79c6
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811615696
In this paper, the device performance of a three-dimensional (3D) FinFET is investigated and a suitable comparison is performed by employing conventional Silicon and III-V materials like InAs and InGaAs in the channel region. We have discussed the DC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::519f254ca8fa653fa90a66278ca84835
https://doi.org/10.1007/978-981-16-1570-2_9
https://doi.org/10.1007/978-981-16-1570-2_9