Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Vibhu Jindal"'
Publikováno v:
Solid-State Electronics. 54:1291-1294
A novel device design for enhancement mode operation of III-nitride high electron mobility transistor (HEMT) structure has been proposed and demonstrated. The proposed HEMT device structure consists of a multi-heterojunction (SiO 2 /Al x Ga 1− x N/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df78ada055b886d31bbd27592f47af0a
https://doi.org/10.1016/j.sse.2010.06.008
https://doi.org/10.1016/j.sse.2010.06.008
Autor:
Michael A. Reshchikov, Fatemeh Shahedipour-Sandvik, B.J. Messer, Neeraj Tripathi, Mihir Tungare, Vibhu Jindal
Publikováno v:
Physica B: Condensed Matter. 404:4903-4906
Thin film of GaN:Mg, pyramidal GaN:Mg on GaN, sapphire and AlN substrates were grown in a MOCVD system under same growth conditions and at the same time. In samples with Mg-doped GaN pyramids on GaN:Si template a strong ultraviolet (UVL) band with fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af110cbbacd2aa4acd9ea5003fe3fa86
https://doi.org/10.1016/j.physb.2009.08.232
https://doi.org/10.1016/j.physb.2009.08.232
Publikováno v:
Applied Surface Science. 255:5905-5909
A key concern for group III-nitride high electron mobility transistor (HEMT) biosensors is the anchoring of specific capture molecules onto the gate surface. To this end, a direct immobilization strategy was developed to attach single-stranded DNA (s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b57b3a566c3ace7e5aac7e6ae17fd1b3
https://doi.org/10.1016/j.apsusc.2009.01.029
https://doi.org/10.1016/j.apsusc.2009.01.029
Publikováno v:
IEEE Sensors Journal. 8:724-729
We report on the fabrication and characterization of Ill-nitride layered tunnel barriers with applications for a new type of tunable hyperspectral imaging detector with intrinsically hyperspectral pixels. This would enable each pixel to be individual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e55f98dd8aa76daaeeca19fe0b7f58a
https://doi.org/10.1109/jsen.2008.923180
https://doi.org/10.1109/jsen.2008.923180
Autor:
Joleyn Balch, Vibhu Jindal, J. R. Grandusky, Steven Francis Leboeuf, Fatemeh Shahedipour-Sandvik, Muhammad Jamil, Neeraj Tripathi, Bradley L. Thiel
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 40:478-483
AlGaN hexagonal nano-pyramids were formed on GaN/sapphire, AlN/sapphire and Al 0.5 Ga 0.5 N/sapphire using selective area heteroepitaxy. It is found that both interfacial strain due to the lattice mismatch and the growth conditions greatly impact gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22b0d061fed8d43080f01ce507516afb
https://doi.org/10.1016/j.physe.2007.07.026
https://doi.org/10.1016/j.physe.2007.07.026
Autor:
E.B. Kaminsky, R.R. Melkote, Vibhu Jindal, Neeraj Tripathi, Fatemeh Shahedipour-Sandvik, H. Lu, J. R. Grandusky
Publikováno v:
Journal of Crystal Growth. 307:309-314
Freestanding hydride vapor phase epitaxy grown GaN substrates subjected to various polishing methods were characterized for their surface and subsurface conditions. Although different polishing processes led to very smooth surfaces as seen in atomic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3fd6aac4354158032fd0e36cc11e69a
https://doi.org/10.1016/j.jcrysgro.2007.06.033
https://doi.org/10.1016/j.jcrysgro.2007.06.033
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 25:441-447
High quality Alx>0.5Ga1−xN layers were grown on (0001) sapphire substrates by metal organic chemical vapor deposition utilizing an AlN nucleation layer. The growth conditions of the nucleation layer were observed to have a large impact on both the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06fd46fcb68155aa8b9b856a87536f66
https://doi.org/10.1116/1.2713409
https://doi.org/10.1116/1.2713409
Autor:
Neeraj Tripathi, Vibhu Jindal, Fatemeh Shahedipour-Sandvik, J. R. Grandusky, Steven Francis Leboeuf, Todd Ryan Tolliver, Joleyn Balch
Publikováno v:
Journal of Materials Research. 22:838-844
We report on the selective area heteroepitaxy and facet evolution of AlGaN nanostructures on GaN/sapphire substrate using various mask materials. We also report on the challenges associated with selection of an appropriate mask material for selective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4de0a32189318a3f41b67ae1df1701d1
https://doi.org/10.1557/jmr.2007.0141
https://doi.org/10.1557/jmr.2007.0141
Autor:
Maseeh Mukhtar, Vibhu Jindal, Kathy Quoi, Benjamin Bunday, Tomasz Garbowski, Dirk Zeidler, Stefan Wurm, Anna Lena Eberle, Brad Thiel, Matt Malloy, Thomas Kemen, Jan Hendrik Peters, Gregor Dellemann
Publikováno v:
SPIE Proceedings.
The new device architectures and materials being introduced for sub-10nm manufacturing, combined with the complexity of multiple patterning and the need for improved hotspot detection strategies, have pushed current wafer inspection technologies to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d33515e672488dda6a2c4fedd8387bc0
https://doi.org/10.1117/12.2196120
https://doi.org/10.1117/12.2196120
Autor:
Kenneth A. Goldberg, Mihir Upadhyaya, Il-Yong Jang, Thomas V. Pistor, Wolfgang Demmerle, Vibhu Jindal, Adarsh Basavalingappa, Iacopo Mochi, Sajan Marokkey, Jenah Harris-Jones, Gregory Denbeaux, Henry C. Herbol
Publikováno v:
SPIE Proceedings.
The availability of defect-free masks is considered to be a critical issue for enabling extreme ultraviolet lithography (EUVL) as the next generation technology. Since completely defect-free masks will be hard to achieve, it is essential to have a go
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce8db8e180d14bedb25b41ee55de69ab
https://doi.org/10.1117/12.2175842
https://doi.org/10.1117/12.2175842