Zobrazeno 1 - 10 of 11 pro vyhledávání: '"Viacheslav Golovanov"'
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Microscopy of Semiconducting Materials 2003
Autor: Alexey Kolmakov, Emanuele Pelucchi, Michael Fay, LUCIA NASI, Maria Varela, Rafael García Roja, Dmitry Lobanov, Helge Weman, Ferdinand Hofer, Rafal Dunin-Borkowski, Markus Weyers, Joel Eymery, Gazi Aliev, Marina Gutiérrez Peinado, Hitoshi Tampo, Eric Tournié, Douglas Paul, Slawomir Kret, Federico Corni, Graziella Malandrino, Paul Midgley, PEDRO L. GALINDO, Cécile Hébert, Alexander Vasiliev, Adalberto Balzarotti, Ana Sanchez, Grzegorz Jurczak, Ondrej Klimo, Wsevolod Lundin, Matthew Weyland, Thomas Walther, Sandra Van Aert, Dmitri Nikolichev, Lothar Houben, Sascha Sadewasser, Viacheslav Golovanov, Adam Łaszcz, Ian Watson, Srinivasan Anand, Vittorio Morandi, Alessandra Catellani, Paul Munroe, Lydia Laffont, Ursel Bangert, Nicolas Grandjean, Jennifer Gray, Annika Lohstroh, Paul Sellin, Andreu Cabot, Jie Zhang, Ernesto Placidi, Evgenii Zavarin, Jacek Ratajczak, Richard Beanland, Mohammed Benaissa, Dmitri GOLBERG, Michael Stöger-Pollach, Paul Harrison, Monica Bollani, Alexey Novikov, Gilles Patriarche, Vadim Sirotkin, Meilin Liu, Miriam Herrera Collado, Sergey Rubanov, Adam Wojcik, ANNA SGARLATA, Arnold Den Dekker, Thomas Dekorsy, André Vantomme, George Cirlin, Jerzy KĄTCKI, Daniel Hill, Masanori Mitome, Xavier Aymerich, Sergio I. Molina, Paweł Dłużewski, Roberta grazia Toro, Souren Grigorian, Klaus Leifer, Mark Aindow, Jean-Michel Chauveau, Giuseppe Nicotra, Martin Albrecht, Corrado Bongiorno, Jiří Limpouch, Hele Savin
Publikováno v: A. G. Cullis, P. A. Midgley. CRC Press, 4 p., 2018, 9781351074636. ⟨10.1201/9781351074636⟩
International audience; In Accumulated Low Schottky Barrier metal oxide semiconductor field effect transistors (MOSFET) on SOl structures, very thin silicide layers are used for ohmic contacts. Silicide contacts form due to metallurgical reaction of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::301d0be2daf17c1032417a5026374bfe
https://hal.science/hal-03555261
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3
Porphyrin adsorbed on the (101[combining macron]0) surface of the wurtzite structure of ZnO--conformation induced effects on the electron transfer characteristics
Autor: Mika, Niskanen, Mikael, Kuisma, Oana, Cramariuc, Viacheslav, Golovanov, Terttu I, Hukka, Nikolai, Tkachenko, Tapio T, Rantala
Publikováno v: Physical chemistry chemical physics : PCCP. 15(40)
Electron transfer at the adsorbate-surface interface is crucial in many applications but the steps taking place prior to and during the electron transfer are not always thoroughly understood. In this work a model system of 4-(porphyrin-5-yl)benzoic a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::0316eb8cc6daae84550ea3e9c86a5db7
https://pubmed.ncbi.nlm.nih.gov/24022239
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5
Oxygen interaction of CdS-based gas sensors with different stoichiometric composition
Autor: Viacheslav Golovanov, Smyntyna, V., Mattogno, G., Kaciulis, S., Lantto, V.
Publikováno v: Scopus-Elsevier
Sensors and actuators. B, Chemical
26 (1995): 108–112. doi:10.1016/0925-4005(94)01568-3
info:cnr-pdr/source/autori:V. Golovanov, V. Smyntyna, G. Mattogno, S. Kaciulis, V. Lantto/titolo:Oxygen interaction of CdS-based gas sensors with different stoichiometric composition/doi:10.1016%2F0925-4005(94)01568-3/rivista:Sensors and actuators. B, Chemical (Print)/anno:1995/pagina_da:108/pagina_a:112/intervallo_pagine:108–112/volume:26
The interaction of oxygen with surfaces of CdS thin films with different stoichiometric compositions was studied by X-ray photoelectron spectroscopy (XPS) and thermal-desorption mass spectroscopy observations combined with conductivity measurements.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3666329ebe814265f7b41ffd73066ecd
http://www.scopus.com/inward/record.url?eid=2-s2.0-0029308324&partnerID=MN8TOARS
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