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Viðarsson, Arnar
The semiconductor silicon carbide (SiC) might be the key to next-generation of power electronic devices. Its favourable material properties can outperform existing silicon (Si) devices enabling better energy efficiency in power electronics. However,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3712::e4b833a633172422fb4031023d9de8f6
https://hdl.handle.net/20.500.11815/4155
https://hdl.handle.net/20.500.11815/4155
