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pro vyhledávání: '"Vethaak, Tom Doekle"'
Autor:
Vethaak, Tom Doekle
Scalability in the fabrication and operation of quantum computers is key to move beyond the NISQ era. So far, superconducting transmon qubits based on aluminum Josephson tunnel junctions have demonstrated the most advanced results, though this techno
Externí odkaz:
http://arxiv.org/abs/2209.02721
Autor:
Vethaak, Tom Doekle, Gustavo, Frederic, Farjot, Thierry, Kubart, Tomas, Gergaud, Patrice, Zhang, Shi-Li, Lefloch, François, Nemouchi, Fabrice
V$_3$Si thin films are known to be superconducting with transition temperatures up to 15 K, depending on the annealing temperature and the properties of the substrate underneath. Here we investigate the film structural properties with the prospect of
Externí odkaz:
http://arxiv.org/abs/2104.00694
Autor:
Vethaak, Tom Doekle, Gustavo, Frederic, Farjot, Thierry, Kubart, Tomas, Gergaud, Patrice, Zhang, Shi-Li, Nemouchi, Fabrice, Lefloch, François
Thin films of superconducting V$_3$Si were prepared by means of RF sputtering from a compound V$_3$Si target at room temperature onto sapphire and oxide-coated silicon wafers, followed by rapid thermal processing under secondary vacuum. The supercond
Externí odkaz:
http://arxiv.org/abs/2010.07312
Publikováno v:
Phys. Rev. B 98, 144509 (2018)
We predict that superconductivity in thin films can be stabilized in high magnetic fields if the superconductor is driven out of equilibrium by a DC voltage bias. For realistic material parameters and temperatures, we show that superconductivity is r
Externí odkaz:
http://arxiv.org/abs/1803.07076
We study non-equilibrium quantum transport of spin, heat, and charge in diffusive heterostructures including both superconductors and materials with spin-dependent fields, such as textured ferromagnets and spin-orbit coupled materials. Using the quas
Externí odkaz:
http://arxiv.org/abs/1706.03069
Autor:
Lefloch, François, Vethaak, Tom Doekle, Gustavo, Frederic, Farjot, Thierry, Kubart, Tomas, Gergaud, Patrice, Zhang, Shi-Li, Nemouchi, Fabrice, Vethaak, T.D.
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, 2021, 244-246, pp.111570. ⟨10.1016/j.mee.2021.111570⟩
Microelectronic Engineering, Elsevier, 2021, 244-246, pp.111570. ⟨10.1016/j.mee.2021.111570⟩
Microelectronic Engineering, 2021, 244-246, pp.111570. ⟨10.1016/j.mee.2021.111570⟩
Microelectronic Engineering, Elsevier, 2021, 244-246, pp.111570. ⟨10.1016/j.mee.2021.111570⟩
V$_3$Si thin films are known to be superconducting with transition temperatures up to 15 K, depending on the annealing temperature and the properties of the substrate underneath. Here we investigate the film structural properties with the prospect of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e8ab6e3d8e71efa4d3ef97948e38e03