Zobrazeno 1 - 10
of 2 567
pro vyhledávání: '"Vescan, A"'
Autor:
Fa, Yuan, Piacentini, Agata, Macco, Bart, Kalisch, Holger, Heuken, Michael, Vescan, Andrei, Wang, Zhenxing, Lemme, Max C.
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS${_2}$)-FETs, have gained significant attention for their potential for ultra-short channels, thereby extending Moore's law. However, MoS${_2}$-FET
Externí odkaz:
http://arxiv.org/abs/2412.08663
Autor:
Ghiami, Amir, Fiadziushkin, Hleb, Sun, Tianyishan, Tang, Songyao, Wang, Yibing, Mayer, Eva, Schneider, Jochen M., Piacentini, Agata, Lemme, Max C., Heuken, Michael, Kalisch, Holger, Vescan, Andrei
A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target substrate with high reproducibility and yield is a crucial step for device integration. In this work, we have introd
Externí odkaz:
http://arxiv.org/abs/2412.02407
Autor:
Cruces, Sofia, Ganeriwala, Mohit D., Lee, Jimin, Völkel, Lukas, Braun, Dennis, Grundmann, Annika, Ran, Ke, Marín, Enrique G., Kalisch, Holger, Heuken, Michael, Vescan, Andrei, Mayer, Joachim, Godoy, Andrés, Daus, Alwin, Lemme, Max C.
Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selector
Externí odkaz:
http://arxiv.org/abs/2408.09780
Autor:
Esteki, Ardeshir, Riazimehr, Sarah, Piacentini, Agata, Knoops, Harm, Macco, Bart, Otto, Martin, Rinke, Gordon, Wang, Zhenxing, Ran, Ke, Mayer, Joachim, Grundmann, Annika, Kalisch, Holger, Heuken, Michael, Vescan, Andrei, Neumaier, Daniel, Daus, Alwin, Lemme, Max C.
Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges remain, such as the deposition of high-quality dielectrics on 2DMs and
Externí odkaz:
http://arxiv.org/abs/2408.07183
Autor:
Ștefan Bilașco, Septimius Trif, Dănuț Petrea, Pompei Cocean, Fodorean Ioan, Roșca Sanda, Iuliu Vescan
Publikováno v:
Heritage, Vol 7, Iss 10, Pp 5814-5838 (2024)
The present study contributes to the morphogenesis of the Miresii Cave, located in Cheia Mare of Dâmbovița in the area of the Bran—Dragoslavele Corridor, an important tourist axis in Romania. The main aim of the research is the proposal to the Sc
Externí odkaz:
https://doaj.org/article/1d1bcc1c53c84271880760dc737ce85c
Autor:
Schätz, Josef, Nayi, Navin, Weber, Jonas, Metzke, Christoph, Lukas, Sebastian, Piacentini, Agata, Reato, Eros, Walter, Jürgen, Schaffus, Tim, Streb, Fabian, Grundmann, Annika, Kalisch, Holger, Heuken, Michael, Vescan, Andrei, Pindl, Stephan, Lemme, Max C.
Publikováno v:
Nature Communications, 15: 2430, 2024
Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifyi
Externí odkaz:
http://arxiv.org/abs/2309.05852
Autor:
Singh, Animesh Pratap, Xu, Han, Ghiami, Amir, Tang, Songyao, Wang, Zhaodong, Kalisch, Holger, Hoffmann-Eifert, Susanne, Daus, Alwin, Ingebrandt, Sven, Vescan, Andrei, Pachauri, Vivek
Publikováno v:
In Applied Surface Science 1 October 2024 669
Autor:
Josef Schätz, Navin Nayi, Jonas Weber, Christoph Metzke, Sebastian Lukas, Jürgen Walter, Tim Schaffus, Fabian Streb, Eros Reato, Agata Piacentini, Annika Grundmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Stephan Pindl, Max C. Lemme
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-11 (2024)
Abstract Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness.
Externí odkaz:
https://doaj.org/article/ccfd73e65b764bda95fe7aa712a8d742
Autor:
Reato, Eros, Palacios, Paula, Uzlu, Burkay, Saeed, Mohamed, Grundmann, Annika, Wang, Zhenyu, Schneider, Daniel S., Wang, Zhenxing, Heuken, Michael, Kalisch, Holger, Vescan, Andrei, Radenovic, Alexandra, Kis, Andras, Neumaier, Daniel, Negra, Renato, Lemme, Max C.
Publikováno v:
Advanced Materials, 202108469, 2022
We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $\mu$m thick pol
Externí odkaz:
http://arxiv.org/abs/2202.04399
Publikováno v:
Plants, Vol 13, Iss 22, p 3146 (2024)
Steroidal 5α-reductase type 2 (S5αR2) is a key enzyme involved in the conversion of testosterone (TST) to dihydrotestosterone (DHT), a crucial process in the development of benign prostatic hyperplasia (BPH). Phytosterols (PSs), natural plant-deriv
Externí odkaz:
https://doaj.org/article/418249d83b154ecc97708cf012fe137c