Zobrazeno 1 - 10
of 162
pro vyhledávání: '"Verzhbitskiy, Ivan"'
Autor:
Mukherjee, Subhrajit, Wang, Shuhua, Venkatakrishnarao, Dasari, Tarn, Yaoju, Talha-Dean, Teymour, Lee, Rainer, Verzhbitskiy, Ivan A., Huang, Ding, Mishra, Abhishek, John, John Wellington, Das, Sarthak, Bussoloti, Fabio, Maddumapatabandi, Thathsara D., Teh, Yee Wen, Ang, Yee Sin, Goh, Kuan Eng Johnson, Lau, Chit Siong
Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental performance still l
Externí odkaz:
http://arxiv.org/abs/2409.08453
Autor:
Das, Sarthak, Huang, Ding, Verzhbitskiy, Ivan, Ooi, Zi-En, Lau, Chit Siong, Lee, Rainer, Wong, Calvin Pei Yu, Goh, Kuan Eng Johnson
Excitons are key to the optoelectronic applications of van der Waals semiconductors with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulation is complicated by their inherent charge neutrality and the additio
Externí odkaz:
http://arxiv.org/abs/2404.09904
Autor:
Lau, Chit Siong, Das, Sarthak, Verzhbitskiy, Ivan A., Huang, Ding, Zhang, Yiyu, Talha-Dean, Teymour, Fu, Wei, Venkatakrishnarao, Dasari, Goh, Kuan Eng Johnson
Publikováno v:
ACS Nano, 17 (11), 9870-9905 (2023)
Despite over a decade of intense research efforts, the full potential of two-dimensional transition metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques
Externí odkaz:
http://arxiv.org/abs/2402.02707
Autor:
Aliyar, Thasneem, Ma, Hongyang, Krishnan, Radha, Singh, Gagandeep, Chong, Bi Qi, Wang, Yitao, Verzhbitskiy, Ivan, Wong, Calvin Pei Yu, Goh, Kuan Eng Johnson, Shen, Ze Xiang, Koh, Teck Seng, Rahman, Rajib, Weber, Bent
Spins confined to point defects in atomically-thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individu
Externí odkaz:
http://arxiv.org/abs/2402.01193
Autor:
Talha-Dean, Teymour, Tarn, Yaoju, Mukherjee, Subhrajit, John, John Wellington, Huang, Ding, Verzhbitskiy, Ivan A., Venkatakrishnarao, Dasari, Das, Sarthak, Lee, Rainer, Mishra, Abhishek, Wang, Shuhua, Ang, Yee Sin, Goh, Kuan Eng Johnson, Lau, Chit Siong
Assembling two-dimensional van der Waals layered materials into heterostructures is an exciting development that sparked the discovery of rich correlated electronic phenomena and offers possibilities for designer device applications. However, resist
Externí odkaz:
http://arxiv.org/abs/2402.01185
Autor:
Khela, Maya, Dabrowski, Maciej, Khan, Safe, Keatley, Paul S., Verzhbitskiy, Ivan, Eda, Goki, Hicken, Robert J., Kurebayashi, Hidekazu, Santos, Elton J. G.
Two-dimensional (2D) van der Waals (vdW) magnets represent one of the most promising horizons for energy-efficient spintronic applications because their broad range of electronic, magnetic and topological properties. Of particular interest is the con
Externí odkaz:
http://arxiv.org/abs/2302.06964
Autor:
Zhang, Yiyu, Venkatakrishnarao, Dasari, Bosman, Michel, Fu, Wei, Das, Sarthak, Bussolotti, Fabio, Lee, Rainer, Teo, Siew Lang, Huang, Ding, Verzhbitskiy, Ivan, Jiang, Zhuojun, Jiang, Zhuoling, Chai, Jian Wei, Tong, Shi Wun, Ooi, Zi-En, Wong, Calvin Pei Yu, Ang, Yee Sin, Goh, Kuan Eng Johnson, Lau, Chit Siong
Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielect
Externí odkaz:
http://arxiv.org/abs/2210.14426
Autor:
Zollitsch, Christoph W., Khan, Safe, Nam, Vu Thanh Trung, Verzhbitskiy, Ivan A., Sagkovits, Dimitrios, O'Sullivan, James, Kennedy, Oscar W., Strungaru, Mara, Santos, Elton J. G., Morton, John J. L., Eda, Goki, Kurebayashi, Hidekazu
Layered van der Waals (vdW) magnets can maintain a magnetic order even down to the single-layer regime and hold promise for integrated spintronic devices. While the magnetic ground state of vdW magnets was extensively studied, key parameters of spin
Externí odkaz:
http://arxiv.org/abs/2206.02460
Autor:
Wu, Yaze, Abdelwahab, Ibrahim, Kwon, Ki Chang, Verzhbitskiy, Ivan, Wang, Lin, Liew, Weng Heng, Yao, Kui, Eda, Goki, Loh, Kian Ping, Shen, Lei, Quek, Su Ying
Using high-throughput first-principles calculations to search for layered van der Waals materials with the largest piezoelectric stress coefficients, we discover NbOI2 to be the one among 2940 monolayers screened. The piezoelectric performance of NbO
Externí odkaz:
http://arxiv.org/abs/2202.01373
Autor:
Frank, Angelina, Zhou, Justin, Grieve, James A., Verzhbitskiy, Ivan, Viana-Gomes, José, Loh, Leyi, Schmid, Michael, Watanabe, Kenji, Taniguchi, Takashi, Eda, Goki, Ling, Alexander
Effective integration of 2D materials such as monolayer transition metal dichalcogenides (TMDs) into photonic waveguides and integrated circuits is being intensely pursued due to the materials' strong exciton-based optical response. Here, we present
Externí odkaz:
http://arxiv.org/abs/2107.11523