Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Vertikov, A."'
Autor:
Anton G. Zubkov, Dmitry A. Oleksyuk, Evgeniy A. Vertikov, Daniya R. Kireeva, Vyacheslav M. Zorin
Publikováno v:
2022 4th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE).
Autor:
Anthony M. D. Lee, Geoffrey Hohert, Sylvia Lam, Renelle Myers, Stephen Lam, Pierre M. Lane, Andrei Vertikov
Publikováno v:
Journal of Biomedical Optics
Significance: Diagnosis of suspicious lung nodules requires precise collection of relevant biopsies for histopathological analysis. Using optical coherence tomography and autofluorescence imaging (OCT-AFI) to improve diagnostic yield in parts of the
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Autor:
Ganping Ju, C. Canady, R. F. C. Farrow, Arto V. Nurmikko, A. Vertikov, Gang Xiao, Alfonso Cebollada
Publikováno v:
Physical Review B. 57:R700-R703
An ultrafast time-resolved magneto-optical pump probe is applied to study spin-relaxation processes in a ferromagnetic ${\mathrm{CoPt}}_{3}$ alloy film. Following spin-selective photoexcitation with circularly polarized femtosecond pulses, transient
Publikováno v:
Journal of Applied Physics. 86:4697-4699
We investigate diffusivity of excess carriers in InGaN multiple quantum wells by near-field optical imaging of photoluminescence profiles created with spatially inhomogeneous photoexcitation, complemented by spatially integrated time-resolved measure
Autor:
Ilker Ozden, R. S. Kern, M. Diagne, Yoon-Kyu Song, F. A. Kish, H. Zhou, Arto V Nurmikko, Carrie Carter-Coman, Michael R. Krames, A. Vertikov
Publikováno v:
Applied Physics Letters. 74:3441-3443
A method is described for fabricating a vertical cavity light emitting structure for nitride semiconductors. The process involves the separation of a InGaN/GaN/AlGaN quantum well heterostructure from its sapphire substrate an its enclosure by a pair
Publikováno v:
Applied Physics Letters. 74:850-852
We describe a high-spatial-resolution optical technique to study transport properties in semiconductors, applicable especially to heterostructures characterized by short-carrier diffusion lengths on the 100 nm scale. The method involves spatial near-
Publikováno v:
Applied Physics Letters. 73:493-495
We report on spatially resolved optical measurements of high-quality InGaN/GaN multiple quantum wells under conditions of direct high optical injection (>1019 cm−3) using near-field optical microscopy in the collection mode. The spectral dependence
Publikováno v:
Applied Physics Letters. 72:2645-2647
We have employed near-field scanning optical microscopy to investigate the influence of specific microstructural defects on the optical properties of thin InGaN/GaN epilayers and quantum wells. These defects are empty “pinholes” with a hexahedron
Autor:
Vertikov, A., Ozden, I.
Publikováno v:
Journal of Applied Physics; 10/15/1999, Vol. 86 Issue 8, p4697, 3p, 3 Graphs