Morphology of homo-epitaxial vicinal (1 0 0) III–V surfaces

Autor: Verschuren, C.A. ^*, Leys, M.R., Rongen, R.T.H., Vonk, H., Wolter, J.H.

Publikováno v: In Journal of Crystal Growth 1999 200(1):19-31

Multi wavelength lasers fabricated using selective area chemical beam epitaxy

Autor: Harmsma, P.J., Leijs, M.R., Verschuren, C.A., Vonk, H., Smit, M.K., Oei, Y.S.

Publikováno v: Integrated photonics research [conference, 19-21 July 1999, Santa Barbara, CA], 17-19
STARTPAGE=17;ENDPAGE=19;TITLE=Integrated photonics research [conference, 19-21 July 1999, Santa Barbara, CA]
Proc. IPRM

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::4d4d7325d909a6947deabfedc7d48dd0
https://research.tue.nl/nl/publications/d27dc5ae-3797-4d2c-8967-c1a8a4d68c48

Integration of optical amplifiers and passive waveguide devices on InP using selective area chemical beam epitaxy

Autor: Harmsma, P.J., Leijs, M.R., Verschuren, C.A., Vonk, H., Smit, M.K., Oei, Y.S.

Publikováno v: Conference proceedings / IPRM 1999 : eleventh international conference on Indium Phosphide and Related Materals, 365-368
STARTPAGE=365;ENDPAGE=368;TITLE=Conference proceedings / IPRM 1999 : eleventh international conference on Indium Phosphide and Related Materals

High quality butt joints were fabricated in the InGaAsP system using a Selective Area Chemical Beam Epitaxy (SA-CBE) regrowth step. Coupling losses were as low as 0.1 dB/interface for butt joints between similar transparent layer stacks. Active and p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::04f14aa1e4d94eebf14b8ec1e52071a4
https://research.tue.nl/nl/publications/c509e305-79ab-42e1-ae31-0ee9c6367033

Realization of integrated optical amplifiers on InP using selective area chemical beam epitaxy

Autor: Harmsma, P.J., Leijs, M.R., Verschuren, C.A., Vonk, H., Oei, Y.S., Smit, M.K.

Publikováno v: ECIO '99, 9th European Conference on Integrated Optics, Turin, Italy, April 13-16, 1999, 317-320
STARTPAGE=317;ENDPAGE=320;TITLE=ECIO '99, 9th European Conference on Integrated Optics, Turin, Italy, April 13-16, 1999

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::eda4a72a48b9537a4bdc41dc0f437a8c
https://research.tue.nl/nl/publications/efe1146c-6523-4298-ba35-98a25c5823ae

Butt coupling loss below 0.1 dB/interface in InP/InGaAs multiple-quantum-well waveguide-structures by selective area chemical beam epitaxy

Autor: Verschuren, C.A., Harmsma, P.J., Oei, Y.S., Leijs, M.R., Vonk, H., Wolter, J.H.

Publikováno v: Semiconductor Science and Technology, 13(8A), 169-172. Institute of Physics

The lateral coupling of waveguiding structures in both and directions is studied using embedded selective area epitaxy by chemical beam epitaxy. All growth steps are carried out under the same growth conditions on InP substrates misoriented by toward

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=narcis______::d8fa05a61bb20e417836b78816005be2
https://research.tue.nl/nl/publications/59bf984a-5881-4516-8507-437f97b2486e