Zobrazeno 1 - 10 of 60 pro vyhledávání: '"Veronique Sousa"'
1
Akademický článek
Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation
Autor: Vishwajeet Maurya, Julien Buckley, Daniel Alquier, Mohamed-Reda Irekti, Helge Haas, Matthew Charles, Marie-Anne Jaud, Veronique Sousa
Publikováno v: Energies, Vol 16, Iss 14, p 5447 (2023)
We investigated the temperature-dependent reverse characteristics (JR-VR-T) of vertical GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET). To understand the device leakage mechanism, temperature-dependent charact
Externí odkaz: https://doaj.org/article/f03b935656764cad937c0453ea001730
Zobrazit plný text záznamu
2
Phase Change and Magnetic Memories for Solid-State Drive Applications
Autor: Luca Perniola, Gabriele Navarro, Cristian Zambelli, Veronique Sousa, Ioan Lucian Prejbeanu
Publikováno v: Proceedings of the IEEE. 105:1790-1811
The state-of-the-art solid-state drives (SSDs) now heterogeneously integrate NAND Flash and dynamic random access memories (DRAMs) to partially hide the limitation of the nonvolatile memory technology. However, due to the increased request for storag
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a7343d5745066f1e0c8eec37aafe751
https://doi.org/10.1109/jproc.2017.2710217
Zobrazit plný text záznamu
3
Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance
Autor: J. Garrione, Marie-Claire Cyrille, Pierre Noé, Gabriele Navarro, N. Castellani, Mathieu Bernard, A. Verdy, Emmanuel Nolot, Veronique Sousa, Etienne Nowak, Guillaume Bourgeois, S. Chevalliez
Publikováno v: IRPS
International Reliability Physics Symposium (IRPS)
2018 IEEE International Reliability Physics Symposium (IRPS)
2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, Burlingame, United States. pp.6D.4-1-6D.4-6
International audience; In this paper we study the reliability of a N-doped Ge-Se-Sb based Ovonic Threshold Switching (OTS) Selector targeting high density Crossbar memory arrays. Through TEM analysis, we investigate the interaction between the TiN e
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba7ce9c6ddfb3087bca84b1e77711423
https://doi.org/10.1109/irps.2018.8353635
Zobrazit plný text záznamu
4
Material Engineering for PCM Device Optimization
Autor: Veronique Sousa, Gabriele Navarro
Publikováno v: Phase Change Memory ISBN: 9783319690520
Phase change memories (PCMs) rely on the amorphous to crystalline phase transformation of a small volume of material, and they owe their success to the unique combination of properties of this peculiar material. However, because of some conflicting d
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6c0e08be88ecbbf7dfcc30c5973de22b
https://doi.org/10.1007/978-3-319-69053-7_7
Zobrazit plný text záznamu
6
Innovative GeS2/Sb2Te3 based phase change memory for low power applications
Autor: N. Castellani, Nicolas Bernier, Luca Perniola, Anthonin Verdy, Mathieu Bernard, Veronique Sousa, Guillaume Bourgeois, Serge Blonkowski, Sophie Chevalliez, Philippe Kowalczyk, Gabriele Navarro, J. Kluge, Pierre Noé
Publikováno v: NVMTS
In this paper, we analyze the electrical performance of a novel Phase-Change Memory (PCM) device based on GeS 2 /Sb 2 Te 3 composition (GSST). Through physico-chemical analysis and electrical characterization we demonstrate a great reduction of the R
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::159552dbef9ecc060d8c36b0bd006c47
https://doi.org/10.1109/nvmts.2017.8171305
Zobrazit plný text záznamu
7
Implicações da Respiração Oral e Deglutição Atípica na Postura Corporal
Autor: Veronique Sousa, Maria Paço, Teresa Pinho
Publikováno v: NASCER E CRESCER-BIRTH AND GROWTH MEDICAL JOURNAL; Vol. 26 No. 2 (2017); 89-94
NASCER E CRESCER-BIRTH AND GROWTH MEDICAL JOURNAL; Vol. 26 N.º 2 (2017); 89-94
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Nascer e Crescer, Vol 26, Iss 2, Pp 89-94 (2017)
Introduction: The stomatognathic system is a set of structures that are interconnected to perform vital functions. Changes in any of the parts may lead to a general postural imbalance. Purpose: To verify if there is a relation between breathing patte
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3991a19b1b795fd40c69a3c09b0781c0
https://revistas.rcaap.pt/nascercrescer/article/view/9610
Zobrazit plný text záznamu
8
Innovative PCM+OTS device with high sub-threshold non-linearity for non-switching reading operations and higher endurance performance
Autor: G. Molas, Veronique Sousa, Pierre Noé, Guillaume Bourgeois, C. Sabbione, Gabriele Navarro, J. Garrione, Mathieu Bernard, A. Verdy, L. Perniola, Leila Fellouh, N. Castellani
Publikováno v: 2017 Symposium on VLSI Technology.
In this paper we present the engineering of a non-volatile 1S1R memory based on a Phase-Change Memory cell (PCM), consisting in a GeN/Ge 2 Sb 2 Te 5 layer, stacked with a GeSe-based Ovonic Threshold Switching selector device (OTS). We optimize and an
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f7c1b0611c9f64ebf05969f54fb74327
https://doi.org/10.23919/vlsit.2017.7998208
Zobrazit plný text záznamu
9
Improved Electrical Performance Thanks to Sb and N Doping in Se-Rich GeSe-Based OTS Selector Devices
Autor: Pierre Noé, Mathieu Bernard, Guillaume Bourgeois, Luca Perniola, Frederique Fillot, Gabriele Navarro, Anthonin Verdy, J. Garrione, Veronique Sousa
Publikováno v: 2017 IEEE International Memory Workshop (IMW).
In this paper, we investigate the impact of Sb and N doping in Se rich GeSe based Ovonic Threshold Switching (OTS) selector devices, targeting crossbar memory applications. Through physico- chemical analysis and electrical characterization we demonst
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6cfbc7eb94b173c2ed4a230e4f2c6751
https://doi.org/10.1109/imw.2017.7939088
Zobrazit plný text záznamu
10
A Novel Programming Technique to Boost Low-Resistance State Performance in Ge-Rich GST Phase Change Memory
Autor: Athanasios Kiouseloglou, Sylvain Maitrejean, Fabien Clermidy, Luca Perniola, Gilles Reimbold, Guido Torelli, Alessandro Cabrini, Barbara De Salvo, A. Persico, Gabriele Navarro, A. Roule, Veronique Sousa
Publikováno v: IEEE Transactions on Electron Devices. 61:1246-1254
In this paper, we examine the problem of the drift of the low-resistance state (LRS) in phase change memories based on C or N doped and undoped Ge-rich Ge2Sb2Te5. A novel procedure, named R-SET technique, is proposed to boost the SET speed of these i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f8f20687951b11488f39977c95318138
https://doi.org/10.1109/ted.2014.2310497
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje