Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Veronique Soulière"'
Autor:
Marina Gutierrez, Sean R.C. McMitchell, Gabriel Ferro, Veronique Soulière, Daniel Araujo, Taguhi Yeghoyan, Kassem Alassaad
Publikováno v:
Materials Science Forum. 924:128-131
We report for the first time the successful heteroepitaxial growth of Si(100) oriented layer on top of a 3C-SiC(001) seed. By using a post-growth modification of the 3C-SiC surface (pulse insertion of precursors during cooling), it led to a change in
Autor:
François Buret, C. Raynaud, Naoufel Haddour, Dominique Planson, Julien Pezard, Mihai Lazar, Veronique Soulière
Publikováno v:
Proceedings of the 2016 European Conference on Silicon Carbide & Related Materials
ECSCRM'16
ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2017, 897, pp.739-742. ⟨10.4028/www.scientific.net/MSF.897.739⟩
HAL
ECSCRM'16
ECSCRM'16, Sep 2016, Halkidiki, Greece. pp.WeP-52
Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2017, 897, pp.739-742. ⟨10.4028/www.scientific.net/MSF.897.739⟩
HAL
International audience; Carbon materials are considered building blocks for most of electrochemical sensors. Their biocompatibility allows their use as transducers for biosensors. Furthermore, they can be patterned, giving interest in all-inclusive b
Autor:
Xian Huang, Gabriel Ferro, Nathalie Millard-Pinard, Veronique Soulière, Stéphane Gavarini, Taguhi Yeghoyan
Publikováno v:
Mater.Sci.Forum
International Conference on Silicon Carbide and Related Materials 2019
International Conference on Silicon Carbide and Related Materials 2019, Sep 2019, Kyoto, Japan. pp.139-144, ⟨10.4028/www.scientific.net/msf.1004.139⟩
International Conference on Silicon Carbide and Related Materials
International Conference on Silicon Carbide and Related Materials, Sep 2019, Kyoto, Japan. pp.139-144, ⟨10.4028/www.scientific.net/MSF.1004.139⟩
International Conference on Silicon Carbide and Related Materials 2019
International Conference on Silicon Carbide and Related Materials 2019, Sep 2019, Kyoto, Japan. pp.139-144, ⟨10.4028/www.scientific.net/msf.1004.139⟩
International Conference on Silicon Carbide and Related Materials
International Conference on Silicon Carbide and Related Materials, Sep 2019, Kyoto, Japan. pp.139-144, ⟨10.4028/www.scientific.net/MSF.1004.139⟩
International audience; 3C-SiC layers of different microstructures (monocrystalline (100) and (111) oriented and polycrystalline) were implanted with high energy (800 keV) 129Xe++ ions. Implantations were performed at room temperature (RT) and at 500
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::202d003f919bcff2e2f85a7284bda6d8
https://hal.archives-ouvertes.fr/hal-03107890
https://hal.archives-ouvertes.fr/hal-03107890
Autor:
Taguhi Yeghoyan, Thierry Douillard, Kassem Alassaad, Veronique Soulière, Gabriel Ferro, Davy Carole
Publikováno v:
Silicon
Silicon, Springer, 2019, ⟨10.1007/s12633-019-00209-2⟩
Silicon, Springer, 2019, ⟨10.1007/s12633-019-00209-2⟩
Thick layer of polycrystalline silicon (poly-Si) grown by Atmospheric Pressure Chemical Vapor Deposition (APCVD) is still a reference material in a number of applications, despite the high thermal budget of this technique. This work presents a materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59d9e82e17da62bfd7c5dc22ba0761d2
https://hal.archives-ouvertes.fr/hal-02174546
https://hal.archives-ouvertes.fr/hal-02174546
Autor:
Gabriel Ferro, Kassem Alassaad, Taguhi Yeghoyan, Daniel Araujo, Veronique Soulière, Marina Gutierrez
Publikováno v:
physica status solidi (a)
physica status solidi (a), Wiley, 2019, 216 (10), pp.1800588. ⟨10.1002/pssa.201800588⟩
physica status solidi (a), Wiley, 2019
physica status solidi (a), Wiley, 2019, 216 (10), pp.1800588. ⟨10.1002/pssa.201800588⟩
physica status solidi (a), Wiley, 2019
International audience; This paper reports on the successful elaboration of fully (100) oriented SiC/Si/SiC/Si multi-stack using chemical vapor deposition. Si(100) heteroepitaxyon 3C-SiC(100) is identified as the critical step which is solved by puls
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6444b6a28d39040b9931258c48b153d6
https://hal.archives-ouvertes.fr/hal-02322404
https://hal.archives-ouvertes.fr/hal-02322404
Publikováno v:
Materials Science Forum. 858:155-158
This work reports on the CVD heteroepitaxial growth of 3C-SiC layers on diamond (100) substrates. To obtain good layer quality, the growth procedure involves a “silicidation” step consisting in depositing a silicon layer by CVD on the diamond sub
Autor:
Kassem Alassaad, Efstathios K. Polychroniadis, Dimitris Christofilos, Jarvan Arvanitidis, Gabriel Ferro, Mamour Sall, Narendraraj Chandran, Veronique Soulière
Publikováno v:
Materials Science Forum. :961-964
The present communication focuses on the bilayer graphene formation on a Ge doped 4H-SiC surface. The 4H-SiC epilayer was grown by CVD with Germane (GeH4) as the dopant precursor. This easily leads to the formation of Ge islands as well as graphene o
Autor:
Gabriel Ferro, Filippo Giannazzo, Kassem Alassaad, Veronique Soulière, Fabrizio Roccaforte, Marilena Vivona
Publikováno v:
Materials Science Forum. :424-427
This work reports on the morphological and electrical characteristics of Ni/4H-SiC Schottky contacts, fabricated on epitaxial layers intentionally covered by micrometric size Ge-droplets. Specifically, the Ge-droplets behave as preferential paths for
Publikováno v:
Materials Science Forum. :121-124
The interaction of liquid Ge and Si droplets, deposited by CVD, on the surface of 4H-SiC single-crystals is studied. It was found that at 1500 °C Ge forms micrometric droplets while Si forms nanometric dots. While the Si dots do not seem to interact
Autor:
Judith Woerle, Veronique Soulière, Hans Sigg, Massimo Camarda, Ulrike Grossner, Gabriel Ferro, Jens Gobrecht
Publikováno v:
Materials Science Forum, 897
In this study, we compare the electrical properties of MOS capacitors fabricated on different surface morphologies. Comparing a standard, low-roughness (
Materials Science Forum, 897
ISSN:0255-5476
ISSN:1662-9752
Materials Science Forum, 897
ISSN:0255-5476
ISSN:1662-9752
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbdee52154e03b10467c8995832e1c8e
https://hdl.handle.net/20.500.11850/225540
https://hdl.handle.net/20.500.11850/225540