Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Veronique De Jonghe"'
Autor:
M. Woo, R. Faure, X. Bossy, H. Leininger, Yves Laplanche, Franck Arnaud, J. Todeschini, A. Beverina, G. Bervin, B. Tavel, M. Jurdit, P. Stolk, Laurent Pain, R. Palla, S. Tourniol, M. Broekaart, K. Brosselin, Daniel Henry, S. Manakli, Veronique De Jonghe, F. Judong, Pascal Gouraud
Publikováno v:
SPIE Proceedings.
The introduction of Electron Beam Direct Write lithography into production represents a challenging alternative to reduce cost and cycle time increase induced by the introduction of new generation nodes. This paper details the development work perfor
Autor:
Veronique De-Jonghe, Francois Leverd, Richard Braspenning, Bénédicte Mortini, Philippe Spinelli
Publikováno v:
Advances in Resist Technology and Processing XX.
193 nm chemically amplified resists currently meet the lithographic targets for the 130 nm and 90 nm nodes. However, the integration of such 193 nm materials is still an issue due to lack of etch resistance of 193 nm resist chemistries. Indeed, depen
Autor:
Laurent Pain, Murielle Jurdit, Yves Laplanche, Jérôme Todeschini, Hugues Leininger, Sonia Tourniol, Romuald Faure, Xavier Bossy, Ramiro Palla, Alessio Beverina, Marcel Broekaart, Fabienne Judong, Karine Brosselin, Linda Depoyan, Yannick Le Friec, Francois Leverd, Veronique De Jonghe, Emmanuelle Josse, Olivier Hinsinger, Philippe Brun, Daniel Henry, Michael Woo, Peter Stolk, Brice Tavel, Franck Arnaud
Publikováno v:
Japanese Journal of Applied Physics. 43:3755
In the frame of the ALLIANCE program between Motorola, Philips Semiconductors and STMicroelectronics, electron beam direct write (EBDW) lithography based on shaped beam projection is employed to start quickly an aggressive 65 nm program for the print