Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Veronica Letka"'
III-Sb barrier detectors suitable for the mid-wave infrared were grown on GaSb by molecular beam epitaxy. Using both bulk-InAsSb and an InAsSb–InAs strained layer superlattice, operation close to room temperature was demonstrated with cutoff wavele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d89188b7c222ee50092d71f0edacdb33
https://doi.org/10.1063/5.0051049
https://doi.org/10.1063/5.0051049
Autor:
Andrew R. J. Marshall, Anthony Krier, Jonathan P. Hayton, Matthew Bentley, Richard Beanland, Evangelia Delli, Veronica Letka, E. Repiso, Qi Lu, P. D. Hodgson, Peter J. Carrington, Adam P. Craig
Publikováno v:
Infrared Sensors, Devices, and Applications X.
GaSb-based materials can be used to produce high performance photonic devices operating in the technologically important mid-infrared spectral range. Direct epitaxial growth of GaSb on silicon (Si) is an attractive method to reduce manufacturing cost
Publikováno v:
Infrared Technology and Applications XLVI.
Resonant cavity-enhanced photodetectors (RCE PDs) present a compelling alternative to broadband detection techniques in the field of gas detection and environmental sensing, due to the distinctive narrow-band absorption fingerprints of gases such as
Autor:
Richard Beanland, Adam P. Craig, Peter J. Carrington, Qi Lu, Anthony Krier, Jonathan P. Hayton, E. Repiso, Andrew R. J. Marshall, Veronica Letka, P. D. Hodgson, Evangelia Delli
Mid-infrared (MIR) silicon photonics holds the potential for realizing next generation ultracompact spectroscopic systems for applications in gas sensing, defense, and medical diagnostics. The direct epitaxial growth of antimonide-based compound semi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02703879165b17575262d09038f03e8c
http://wrap.warwick.ac.uk/114498/1/WRAP-mid-infrared-InAsInAsSb-superlattice-nBn-photodetector-monolithically-integrated-silicon-Beanland-2019.pdf
http://wrap.warwick.ac.uk/114498/1/WRAP-mid-infrared-InAsInAsSb-superlattice-nBn-photodetector-monolithically-integrated-silicon-Beanland-2019.pdf
Publikováno v:
Applied Physics Letters. 117:073503
The design, fabrication, and characterization of a resonant cavity-enhanced photodetector (RCE PD) operating in the long-wavelength infrared regime are demonstrated. The incorporation of the low bandgap InAs/ InAs 0.70 Sb 0.30 type-II strained-layer
Publikováno v:
Electro-Optical and Infrared Systems: Technology and Applications XIV.
InAs/InAs1-xSbx type-II strained-layer superlattices (SLS) are a structure with potential infrared detection applications, owing to its tunable bandgap and suppressed Auger recombination. A series of medium-wavelength infrared (MWIR) InAs/InAs0.815Sb
Publikováno v:
Optics Express. 27:23970
Mid-infrared resonant cavity-enhanced photodetectors (RCE PD) present a promising technology for targeted gas detection. We demonstrate an RCE PD incorporating an InAs/InAsSb superlattice as the detecting element, extending the resonant wavelength be