Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Veronica Christiano"'
Autor:
C. Adelmann, Veronica Christiano, Patrick Verdonck, Danilo Roque Huanca, Sebastião G. Dos Santos Filho
Publikováno v:
Journal of Integrated Circuits and Systems. 10:49-58
Hafnium aluminates films with 50 mol% of Hf were deposited onto Si(100) using atomic layer deposition. The films were annealed by RTP at 1000 o C for 60 s in pure N 2 or N 2 +5%O 2 and by LASER at 1200 o C for 1ms in pure N 2 . Then, they were charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c27c8d642093e35f53f9e60de12191f
https://doi.org/10.29292/jics.v10i1.405
https://doi.org/10.29292/jics.v10i1.405
Publikováno v:
2019 34th Symposium on Microelectronics Technology and Devices (SBMicro).
This paper discusses the metal-oxide-semiconductor (MOS) solar cells for energy harvesting from indoor light emitting diode (LED) illumination using Al/SiO 2 /Si-p structures. Wafers of the Si-p (100) with a resistivity of $10\Omega $.cm were used. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::167eb37af87155ee659908cc91368c0e
https://doi.org/10.1109/sbmicro.2019.8919375
https://doi.org/10.1109/sbmicro.2019.8919375
Autor:
Fábio Izumi, Marcos N. Watanabe, Veronica Christiano, Sebastião G. Dos Santos Filho, William Chiappim Junior
Publikováno v:
2018 33rd Symposium on Microelectronics Technology and Devices (SBMicro).
This paper discusses the metal-oxidesemiconductor (MOS) solar cells for energy harvesting applications using Al(200nm)/SiO 2 (1.73nm)/Si-p and Al(200nm)/Mg(30nm)/SiO 2 (1.73nm)/Si-p structures. P-type (100) silicon wafers with resistivity of 10 $\Ome
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::296dcf240769d083ef93edc90c9c9e1a
https://doi.org/10.1109/sbmicro.2018.8511579
https://doi.org/10.1109/sbmicro.2018.8511579
Autor:
S. G. dos Santos Filho, G. Kellerman, Patrick Verdonck, Danilo Roque Huanca, Veronica Christiano, Christoph Adelmann
Publikováno v:
ECS Transactions. 49:383-390
Hafnium aluminates thin films deposited (50% Hf) by atomic layer deposition upon silicon substrate and then annealed by two different methods into two different environments. Their structural and chemical behaviors after thermal treatment were invest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d23b20aeaeb588fcce7d9f380762b419
https://doi.org/10.1149/04901.0383ecst
https://doi.org/10.1149/04901.0383ecst
Publikováno v:
ECS Transactions. 31:333-340
This work describes a conductance modeling of aluminum oxide (Al2O3) gates prepared by oxidation of aluminum thin films in nitric acid at room temperature followed by annealing at 650oC. The electrical characterization was performed by measurements o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ea315afb0bbb58378abf25bb31fd000
https://doi.org/10.1149/1.3474177
https://doi.org/10.1149/1.3474177
Autor:
Victor Sonnenberg, Giuliano Gozzi, Sebastião G. Dos Santos Filho, Veronica Christiano, Sthefane A. Da Conceição
Publikováno v:
ECS Transactions. 23:11-17
This work describes the formation and characterization of aluminum oxide (Al2O3) prepared by oxidation of aluminum thin films in nitric acid at room temperature followed by annealing at 650oC in N2 or Ar on previously engineered (100) silicon wafer s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bdcfdf5b6637a7159afe826a3c3a9c2
https://doi.org/10.1149/1.3183696
https://doi.org/10.1149/1.3183696
Publikováno v:
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro).
Physical and electrical characterization of alumina and hafnium aluminates gate dielectrics were carried out to investigate their semi-insulating characteristics as passivating layer for power devices. The deposited films were annealed in pure nitrog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fc09fd8155ab7a031a6f06f31db758e
https://doi.org/10.1109/sbmicro.2014.6940119
https://doi.org/10.1109/sbmicro.2014.6940119
Publikováno v:
28th Symposium on Microelectronics Technology and Devices (SBMicro 2013).
Electrical characterization of hafnium aluminates gate dielectrics, using capacitance-voltage (C-V) measurements, was carried out for different frequencies. The dielectric film was deposited with equal molar concentrations of aluminum and hafnium (Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e0e0bc218ec8315117f6ef33874fcf6
https://doi.org/10.1109/sbmicro.2013.6676150
https://doi.org/10.1109/sbmicro.2013.6676150
Autor:
G. Kellerman, Patrick Verdonck, Veronica Christiano, Sebastião G. Dos Santos Filho, Danilo Roque Huanca
Publikováno v:
28th Symposium on Microelectronics Technology and Devices (SBMicro 2013).
Advanced low-k (ALK) porous SiCOH films have been deposited onto a silicon substrate by plasma enhancement chemical vapor deposition (PECVD). Some of these samples were submitted to plasmas in order to investigate its effects on the pore sealing and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b5cf8abef47c419f1e7cc1455b13f52
https://doi.org/10.1109/sbmicro.2013.6676136
https://doi.org/10.1109/sbmicro.2013.6676136
Publikováno v:
28th Symposium on Microelectronics Technology and Devices (SBMicro 2013).
Oxide layers with thickness varying from 1 to 2.4 nm, were obtained at 700 and 850°C, in a mixed ambient of nitrogen and oxygen. Thicker layers were also grown at 1150°C in the mixed ambient, or just in oxygen, using a conventional thermal furnace
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d2b514cf82e22ec4260791a668ab1ed
https://doi.org/10.1109/sbmicro.2013.6676135
https://doi.org/10.1109/sbmicro.2013.6676135