Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Veronica Braza"'
Autor:
Verónica Braza, Daniel Fernández, Teresa Ben, Sara Flores, Nicholas James Bailey, Matthew Carr, Robert Richards, David Gonzalez
Publikováno v:
Nanomaterials, Vol 14, Iss 4, p 375 (2024)
This paper investigates the effect of GaAsBi strain reduction layers (SRLs) on InAs QDs with different Bi fluxes to achieve nanostructures with improved temperature stability. The SRLs are grown at a lower temperature (370 °C) than the usual capping
Externí odkaz:
https://doaj.org/article/1863f3bd401f4177a46d6294a810391b
Autor:
Daniel F. Reyes, Veronica Braza, Alicia Gonzalo, Antonio D. Utrilla, Davide F. Grossi, Paul M. Koenraad, Alvaro Guzman, Adrian Hierro, Jose M. Ulloa, Teresa Ben, David Gonzalez
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d68b2641f4cf5d91ca1bfd492d8767d
https://doi.org/10.1002/9783527808465.emc2016.6572
https://doi.org/10.1002/9783527808465.emc2016.6572
Autor:
Daniel F. Reyes, Veronica Braza, Antonio D. Utrilla, Teresa Ben, Alvaro Guzman, Adrian Hierro, Jose M. Ulloa, David Gonzalez
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5831e5934a6751145d6b324d5179d738
https://doi.org/10.1002/9783527808465.emc2016.6765
https://doi.org/10.1002/9783527808465.emc2016.6765
Autor:
David Gonzalez, Sara Flores, Verónica Braza, Daniel F. Reyes, Alejandro Gallego Carro, Lazar Stanojević, Malte Schwarz, Jose María Ulloa, Teresa Ben
Publikováno v:
Nanomaterials, Vol 13, Iss 5, p 798 (2023)
For optoelectronic devices from the near to the far infrared, the advantages of using ultrathin III-Sb layers as quantum wells or in superlattices are well known. However, these alloys suffer from severe surface segregation problems, so that the actu
Externí odkaz:
https://doaj.org/article/63d1c2de4cf04604bd1074c60feedc58
Autor:
Nazaret Ruiz, Daniel Fernandez, Esperanza Luna, Lazar Stanojević, Teresa Ben, Sara Flores, Verónica Braza, Alejandro Gallego-Carro, Guillermo Bárcena-González, Andres Yañez, José María Ulloa, David González
Publikováno v:
Nanomaterials, Vol 12, Iss 14, p 2504 (2022)
The use of thin AlA capping layers (CLs) on InAs quantum dots (QDs) has recently received considerable attention due to improved photovoltaic performance in QD solar cells. However, there is little data on the structural changes that occur during cap
Externí odkaz:
https://doaj.org/article/923baddbaf5c45bfabb1a7874f7c1c6e
Autor:
Nazaret Ruiz, Daniel Fernández, Lazar Stanojević, Teresa Ben, Sara Flores, Verónica Braza, Alejandro Gallego Carro, Esperanza Luna, José María Ulloa, David González
Publikováno v:
Nanomaterials, Vol 12, Iss 8, p 1368 (2022)
Recently, thin AlAs capping layers (CLs) on InAs quantum dot solar cells (QDSCs) have been shown to yield better photovoltaic efficiency compared to traditional QDSCs. Although it has been proposed that this improvement is due to the suppression of t
Externí odkaz:
https://doaj.org/article/01201293f06e45b7a0130b7ef9c95795
Autor:
Nazaret Ruiz, Verónica Braza, Alicia Gonzalo, Daniel Fernández, Teresa Ben, Sara Flores, José María Ulloa, David González
Publikováno v:
Nanomaterials, Vol 9, Iss 4, p 623 (2019)
Superlattice structures (SLs) with type-II (GaAsSb/GaAsN) and -I (GaAsSbN/GaAs) band alignments have received a great deal of attention for multijunction solar cell (MJSC) applications, as they present a strongly intensified luminescence and a signif
Externí odkaz:
https://doaj.org/article/058015145f05413aafdbe90df5b0c71e