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of 5
pro vyhledávání: '"Vermeer, A.J.P.M."'
Method of depositing an atomic layer on a substrate. the method comprises supplying a precursor gas fraom a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the presursor-gas supply to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::534c97dc25d98fb210210191b16797eb
http://resolver.tudelft.nl/uuid:d7ad1dd6-7435-4341-a29f-6bc5b5c82ec5
http://resolver.tudelft.nl/uuid:d7ad1dd6-7435-4341-a29f-6bc5b5c82ec5
Autor:
Roozeboom, F., Lankhorst, A. M., Poodt, P.W.G., Koster, N.B., Winands, G.J.J., Vermeer, A.J.P.M.
The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::bf61ef40f09a751548bb002657fb4689
http://resolver.tudelft.nl/uuid:65ba57b7-a781-4789-89d8-1fea1e72e21e
http://resolver.tudelft.nl/uuid:65ba57b7-a781-4789-89d8-1fea1e72e21e
Autor:
Vermeer, A.J.P.M., Roozeboom, Fred, van Deelen, Joop, Plasma & Materials Processing
Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply tow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::61575a9380d98bdfcdb4997a1f9405f4
https://research.tue.nl/nl/publications/ddaf1c51-6884-4e2e-be69-2cd21e6acbb8
https://research.tue.nl/nl/publications/ddaf1c51-6884-4e2e-be69-2cd21e6acbb8
Autor:
Vermeer, A.J.P.M., Roozeboom, F., van Deelen, J., Plasma & Materials Processing
Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply tow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::6ab4535ab13f850a54121c682733d0c6
https://research.tue.nl/nl/publications/2a545946-d15e-4fd9-ae28-1e85dd244035
https://research.tue.nl/nl/publications/2a545946-d15e-4fd9-ae28-1e85dd244035
Autor:
Roozeboom, F., Lankhorst, A.M., Poodt, P.W.G., Koster, N.B., Winands, G.J.J., Vermeer, A.J.P.M., Plasma & Materials Processing
The invention relates to an apparatus for reactive ion etching of a substrate, comprising: a plasma etch zone including an etch gas supply and arranged with a plasma generating structure for igniting a plasma and comprising an electrode structure arr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::d6ab630a4b1ab0f6609ab1c84add7291
https://research.tue.nl/nl/publications/e9b33a2d-808c-4f18-b309-745326a5e214
https://research.tue.nl/nl/publications/e9b33a2d-808c-4f18-b309-745326a5e214