Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Verena Vescoli"'
Autor:
E.G. Ioannidis, Ewald Wachmann, Friedrich Peter Leisenberger, Verena Vescoli, K. Rohracher, Walter Pflanzl, F. Roger, E. Seebacher
Publikováno v:
Solid-State Electronics. 135:1-7
In this paper, we present a detailed investigation of the impact of different Lightly Doped Drain (LDD) implants and different well doping on the low frequency noise performance of n- and p-MOS devices from a CMOS technology node. We investigate the
Autor:
Heimo Gensinger, Friedrich Peter Leisenberger, Martin Schrems, E. Seebacher, Hubert Enichlmair, Rainer Minixhofer, Ewald Wachmann, Gregor Schatzberger, Martin Knaipp, Verena Vescoli
Publikováno v:
e & i Elektrotechnik und Informationstechnik. 125:109-117
Integration of low voltage analog and logic circuits as well as high-voltage (HV) devices for operation at greater than 5 V enables Smart Power ICs used in almost any system that contains electronics. HVCMOS (High-Voltage CMOS) technologies offer muc
Publikováno v:
Microelectronics Journal. 37:243-248
This work describes the evolution of a CMOS based lateral high voltage (HV) technology concept, where the HV part is integrated in a low voltage (LV) CMOS technology. The starting point is an existing substrate related state of the art 0.35 μm LV CM
Autor:
Verena Vescoli, Ewald Wachmann, Kerstin Schneider-Hornstein, A. Marchlewski, Horst Zimmermann, Gerald Meinhardt, Ingrid Jonak-Auer
Publikováno v:
SPIE Proceedings.
We present an improvement of monolithically integrated photodiodes in a p-type substrate of a commercial high-speed 0.35μm SiGe heterojunction bipolar transistor (HBT) BiCMOS technology. These photodetectors (PDs) combine low capacitance with high b
Autor:
Martin Knaipp, Federico Baronti, Roberto Roncella, Riccardo Serventi, Roberto Saletti, P. D'Abramo, Verena Vescoli, Rainer Minixhofer, Martin Schrems
Publikováno v:
DATE Designers' Forum
This paper presents one of the first fully functional FlexRay transceivers manufactured in a 0.35 mum CMOS high-voltage technology, which provides high voltage MOS devices together with standard 3.3 V gates. The circuit operates as interface between
Autor:
Georg Röhrer, Verena Vescoli, Jong Mun Park, Martin Schrems, Martin Knaipp, Rainer Minixhofer, Hubert Enichlmair
Publikováno v:
IET Circuits, Devices & Systems. 2:347
With the continuing scaling of metal–oxide–semiconductor (MOS) devices, the hot-carrier (HC)-induced device degradation has become a major reliabiliy concern in sub- and deep-submicrometre MOS field-effect transistors (MOSFETs) and lateral double