Zobrazeno 1 - 10
of 1 176
pro vyhledávání: '"Verbeeck, J."'
Autor:
Bliokh, K. Y., Karimi, E., Padgett, M. J., Alonso, M. A., Dennis, M. R., Dudley, A., Forbes, A., Zahedpour, S., Hancock, S. W., Milchberg, H. M., Rotter, S., Nori, F., Özdemir, Ş. K., Bender, N., Cao, H., Corkum, P. B., Hernández-García, C., Ren, H., Kivshar, Y., Silveirinha, M. G., Engheta, N., Rauschenbeutel, A., Schneeweiss, P., Volz, J., Leykam, D., Smirnova, D. A., Rong, K., Wang, B., Hasman, E., Picardi, M. F., Zayats, A. V., Rodríguez-Fortuño, F. J., Yang, C., Ren, J., Khanikaev, A. B., Alù, A., Brasselet, E., Shats, M., Verbeeck, J., Schattschneider, P., Sarenac, D., Cory, D. G., Pushin, D., Birk, M., Gorlach, A., Kaminer, I., Cardano, F., Marrucci, L., Krenn, M., Marquardt, F.
Publikováno v:
Journal of Optics, 25(10), 103001 (2023)
Structured waves are ubiquitous for all areas of wave physics, both classical and quantum, where the wavefields are inhomogeneous and cannot be approximated by a single plane wave. Even the interference of two plane waves, or a single inhomogeneous (
Externí odkaz:
http://arxiv.org/abs/2301.05349
Autor:
Achari, A., Bekaert, J., Sreepal, V., Orekhov, A., Kumaravadivel, P., Kim, M., Gauquelin, N., Pillai, P. Balakrishna, Verbeeck, J., Peeters, F. M., Geim, A. K., Milosevic, M. V., Nair, R. R.
Publikováno v:
Nano Lett. 22,6268,2022
Van der Waals (vdW) heterostructures continue to attract intense interest as a route of designing materials with novel properties that cannot be found in naturally occurring materials. Unfortunately, this approach is currently limited to only a few l
Externí odkaz:
http://arxiv.org/abs/2206.11665
Ptychography provides highly efficient imaging in scanning transmission electron microscopy (STEM), but questions have remained over its applicability to strongly scattering samples such as those most commonly seen in materialsscience. Although contr
Externí odkaz:
http://arxiv.org/abs/2205.13308
In this paper we study LaAlO$_3$/Eu$_{1-x}$La$_x$TiO$_3$/SrTiO$_3$ structures with nominally x = 0, 0.1 and different thicknesses of the Eu$_{1-x}$La$_x$TiO$_3$ layer. We observe that both systems have many properties similar to previously studied La
Externí odkaz:
http://arxiv.org/abs/2109.00620
Autor:
van Thiel, T. C., Brzezicki, W., Autieri, C., Hortensius, J. R., Afanasiev, D., Gauquelin, N., Jannis, D., Janssen, N., Groenendijk, D. J., Fatermans, J., van Aert, S., Verbeeck, J., Cuoco, M., Caviglia, A. D.
Publikováno v:
Phys. Rev. Lett. 127, 127202 (2021)
In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar materials, where
Externí odkaz:
http://arxiv.org/abs/2107.03359
Strain engineering in semiconductor transistor devices has become vital in the semiconductor industry due to the ever increasing need for performance enhancement at the nanoscale. Raman spectroscopy is a non-invasive measurement technique with high s
Externí odkaz:
http://arxiv.org/abs/2106.08478
In this second part of a series we attempt to construct an empirical model that can mimick all experimental observations made regarding the role of an alternative interleaved scan pattern in STEM imaging on the beam damage in a specific zeolite sampl
Externí odkaz:
http://arxiv.org/abs/2104.14992
Autor:
Psilodimitrakopoulos, S., Orekhov, A., Mouchliadis, L., Jannis, D., Maragkakis, G. M., Kourmoulakis, G., Gauquelin, N., Kioseoglou, G., Verbeeck, J., Stratakis, E.
Atomically thin two-dimensional (2D) materials can be vertically stacked with van der Waals bonds, which enable interlayer coupling. In the particular case of transition metal dichalcogenide (TMD) bilayers, the relative direction between the two mono
Externí odkaz:
http://arxiv.org/abs/2104.05783
Autor:
Orekhov, A., Jannis, D., Gauquelin, N., Guzzinati, G., Mehta, A. Nalin, Psilodimitrakopoulos, S., Mouchliadis, L., Sahoo, P. K., Paradisanos, I., Ferrari, A. C., Kioseoglou, G., Stratakis, E., Verbeeck, J.
Layered materials (LMs) are at the centre of an ever increasing research effort due to their potential use in a variety of applications. The presence of imperfections, such as bi- or multilayer areas, holes, grain boundaries, isotropic and anisotropi
Externí odkaz:
http://arxiv.org/abs/2011.01875
We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, Transmission Electron Microscopy images revealed that the samples tend to amorphize.
Externí odkaz:
http://arxiv.org/abs/2008.03224