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Autor:
Marcos N. Watanabe, Fábio Izumi, Ricardo C. Rangel, Sebastião G. Dos Santos Filho, Gabriel Oliveira Louzada, Stefanie Pereira Regis, Verônica Christiano Abê, William Tsuyoshi Shiga
Publikováno v:
Journal of Integrated Circuits and Systems. 15:1-5
This article discusses fabrication, characteriza-tion and studies of the C-V characteristics of SiO layers depos-ited by PVD on Si-p substrates with doping around 1x1016 cm-3. MOS capacitors (Metal-Oxide-Semiconductor) with Al/SiO2/Si-P, Al/SiO/Si-P