Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Venu Anand"'
Publikováno v:
GAIMS Journal of Medical Sciences, Vol 4, Iss 1, Pp 131-135 (2023)
Introduction: Sentinel lymph node imprint cytology is a reliable method of assessment of axillary lymph node status in clinically node-negative breast cancers. This technique is advantageous in resource-poor settings where cryostats are not available
Externí odkaz:
https://doaj.org/article/28a27c4aa4c44217a2aaaf8a9a73fde8
Publikováno v:
Materials Research Express, Vol 11, Iss 1, p 016403 (2024)
Zinc oxynitride (ZnON) has recently emerged as a highly promising band gap-tunable semiconductor material for optoelectronic applications. In this study, a novel DC reactive sputtering protocol was developed to fabricate ZnON films with varying eleme
Externí odkaz:
https://doaj.org/article/0a546289854a4536b8d161b8ff92a619
Publikováno v:
Journal of Clinical and Diagnostic Research, Vol 8, Iss 3, Pp 134-135 (2014)
Extraskeletal Chondroma (ESC) is uncommon which occurs predominantly in hands and feet. It has a variable histology, with two thirds of the ESCs showing mature hyaline cartilage which is arranged in distinct lobules with fibrosis, or ossification, o
Externí odkaz:
https://doaj.org/article/6b12f1b3809349c8928c6b499807bd60
Publikováno v:
INTERNATIONAL JOURNAL OF SCIENTIFIC RESEARCH. :37-40
Introduction: Frozen Section (FS) helps in the typing of cancer – benign or malignant, tumor subtyping, assessment of margin status and lymph node involvement by the tumor preoperatively. Imprint smear (IS) study in place of Frozen section for intr
Publikováno v:
Onkologia i Radioterapia; 2023, Vol. 17 Issue 12, p1-8, 8p
Autor:
J G Anjana, Venu Anand
Publikováno v:
2022 4th International Conference on Inventive Research in Computing Applications (ICIRCA).
Publikováno v:
2022 Third International Conference on Intelligent Computing Instrumentation and Control Technologies (ICICICT).
Publikováno v:
Journal of Pharmaceutical Negative Results; 2023, Vol. 14 Issue 2, p3650-3653, 4p
Publikováno v:
Flexible and Printed Electronics. 7:035004
In this work we present analytical models for the drain current and threshold voltage of zinc oxynitride thin film transistors. A surface potential based modeling approach has been adopted and the exact closed form solutions for the potential profile
Autor:
Venu Anand, J G Anjana
Publikováno v:
2020 International Conference on Electronics and Sustainable Communication Systems (ICESC).
The proposed work has reported the numerical simulation of Zinc Oxynitride based thin film transistors. The aim of the proposed model is to estimate the density of states distribution of ZnON semiconductor. The parameters of the assumed density of st