Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Venkataramana R. Chavva"'
Autor:
Fareen Adeni Khaja, Venkataramana R. Chavva, Wesley Suen, Osbert Chan, Chi-Nung Ni, Man-Ping Cai, Thirumal Thanigaivelan, B. Colombeau, Motoya Okazaki, Hans-Joachim L. Gossmann, Adam Brand, Hao Chen, Shashank Sharma, Nilay Pradhan, Bingxi Wood, Andrew M. Waite, Miao Jin, Abhilash J. Mayur, Shiyu Sun, Chorng-Ping Chang, Naushad Variam, Samuel Swaroop Munnangi
Publikováno v:
ECS Transactions. 58:249-256
Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond B. Wood, F. Khaja, B. Colombeau, S. Sun, A. Waite, M. Jin, H. Chen, O. Chan, T. Thanigaivelan, N. Pradhan, H.-J. Gossmann, S. Sharma, V. Chavva, M-P Cai, M. Okazaki, S. Munnangi, C-N Ni,
Autor:
Venkataramana R. Chavva
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
A number of schemes have been proposed in the literature to getter the metal impurities, which are detrimental to the device performance and yield (DPY), in silicon. These schemes vary from segregation based gettering, to extended defect clusters to
Autor:
B.N. Guo, T. Toh, Venkataramana R. Chavva, Shengwu Chang, Brian Gori, Hans-Joachim L. Gossmann, Andrew M. Waite
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
Implantation of light ion species, such as Hydrogen and Helium, is widely used to modify silicon electronic properties by adjustment of charge carrier lifetime. Hydrogen-related donors can also be induced in great depth with MeV implants especially f
Autor:
Saikumar Vivekanand, P. Kirsch, C. Hobbs, K. V. Rao, Martin Rodgers, Todd Henry, Fareen Adeni Khaja, Venkataramana R. Chavva, T. Ngai, Raj Jammy, Kyu-Ha Shim
Publikováno v:
AIP Conference Proceedings.
In this work, we report the use of Aluminum ion implantation to modulate the threshold voltage for Hf-based high-k /TiN metal gate PMOS FinFETs on SOI. A positive 170mV VFB shift with 0.8A reduction in CETinv was achieved by implanting Aluminum at sh
Publikováno v:
AIP Conference Proceedings.
CMOS Image Sensors (CIS) can suffer from yield loss due to metal impurities, which act as generation and recombination centers, giving rise to higher dark currents than the original signal current, resulting in “White Pixel” defects. Metal impuri