Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Venkataraman, Sunitha"'
Autor:
Venkataraman, Sunitha
The objective of this work is to provide a comprehensive analysis of the small-signal and broadband noise performance of highly scaled silicon-based field-effect transistors (FETs), and develop high-frequency noise models for robust radio frequency (
Externí odkaz:
http://hdl.handle.net/1853/16232
Autor:
Banerjee, Bhaskar1 bhaskar@ece.gatech.edu, Venkataraman, Sunitha1, Lu, Yuan1, Liang, Qingqing1, Lee, Chang-Ho, Nuttinck, Sebastien2, Heo, Dekhyuon3, Chen, Yi-Jan Emery4, Cressler, John D.1, Laskar, Joy1, Freeman, Greg5, Ahlgren, David C.5
Publikováno v:
IEEE Transactions on Electron Devices. Apr2005, Vol. 52 Issue 4, p585-593. 9p.
Autor:
Nuttinck, Sebastien, Wagner, Brent K., Banerjee, Bhaskar, Venkataraman, Sunitha, Gebara, Edward, Laskar, Joy, Harris, Herbert M.
Publikováno v:
IEEE Transactions on Microwave Theory & Techniques; Dec2003, Vol. 51 Issue 12, p2445-2452, 8p, 7 Black and White Photographs, 2 Diagrams, 2 Charts, 8 Graphs
Autor:
Raghavan, Arvind, Venkataraman, Sunitha, Banerjee, Bhaskar, Youngsuk Suh, Deukhyoum Heo, Laskar, Joy
Publikováno v:
IEEE Journal of Solid-State Circuits; Sep2003, Vol. 38 Issue 9, p1443-1450, 8p, 2 Diagrams, 3 Charts, 10 Graphs