Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Venkanna Kanneboina"'
Publikováno v:
Materials Today: Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6545fcb19e7328ac945fca9dda1899f
https://doi.org/10.1016/j.matpr.2023.04.583
https://doi.org/10.1016/j.matpr.2023.04.583
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:4457-4465
Crystalline silicon (c-Si)/ hydrogenated amorphous silicon (a-Si:H) heterojunction (Ag/Al/c-Si(n)/a-Si:H(i)/a-Si:H(p)/ITO/Ag) solar cells were fabricated by RF-PECVD technique. The efficiency (η), short circuit current density (Jsc) and fill factor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e290a4faf7ac5d6fd1a280d38d3456dc
https://doi.org/10.1007/s10854-020-05187-5
https://doi.org/10.1007/s10854-020-05187-5
Autor:
Venkanna Kanneboina
Publikováno v:
Journal of Computational Electronics. 20:344-352
The performance of c-Si/a-Si:H heterojunction solar cells with different emitter layers is studied by using the automat for simulation of heterostructures (AFORS-HET) tool. The a-Si:H(p) layer in the Ag/ZnO/a-Si:H(p)/a-Si:H(i)/c-Si(n)/a-Si:H(i)/a-Si:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85466455b19ca6ffcabab24f40988e14
https://doi.org/10.1007/s10825-020-01626-y
https://doi.org/10.1007/s10825-020-01626-y
Autor:
Venkanna Kanneboina
Publikováno v:
Bulletin of Materials Science. 44
This article presents effective utilization of light by transparent conducting oxide (TCO) layer to enhance the performance of c-Si/a-Si:H heterojunction solar cells (HJSC) by simulation. The optical and recombination losses in solar cells severely d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db5bd7ff7963afc531a8952fdd03a079
https://doi.org/10.1007/s12034-021-02534-y
https://doi.org/10.1007/s12034-021-02534-y
Publikováno v:
Thin Solid Films. 682:126-130
Hot-wire chemical vapour deposition is a versatile technique to deposit a-Si:H and nc-Si films at higher deposition rate (~5–10 A/s) as compared to Plasma enhanced chemical vapour deposition (1–2 A/s). We report the deposition of highly crystalli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce21d50f1593c87fc595dc16f7f28573
https://doi.org/10.1016/j.tsf.2019.04.038
https://doi.org/10.1016/j.tsf.2019.04.038
Autor:
Venkanna Kanneboina
Publikováno v:
Microelectronic Engineering. 265:111884
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67b12fb5a528e969e5badb331bf522a7
https://doi.org/10.1016/j.mee.2022.111884
https://doi.org/10.1016/j.mee.2022.111884
Autor:
Venkanna Kanneboina, Pratima Agarwal
Publikováno v:
SN Applied Sciences. 3
Spectroscopic ellipsometry (SE) is a sophisticated technique to find the optical constants, bandgap and microstructure of thin layer. SE is used to study the microstructure evolution in boron-doped amorphous silicon films for different hydrogen flow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66abec0c139bbd5ba11bc6baf8444ad6
https://doi.org/10.1007/s42452-021-04495-7
https://doi.org/10.1007/s42452-021-04495-7
Autor:
Venkanna Kanneboina
This paper presents the influence of defect states and thickness of interface layer on high efficiency of c-Si/a-Si:H heterojunction solar cells with higher bandgap emitter a-Si:H(p) layer by AFORSHET simulation tool. At first, the performance of Ag/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed6e6aed6a719d24659503bee3065a7b
https://doi.org/10.21203/rs.3.rs-210502/v1
https://doi.org/10.21203/rs.3.rs-210502/v1
Autor:
Pratima Agarwal, Venkanna Kanneboina
Publikováno v:
Journal of Electronic Materials. 48:2404-2410
The influence of hydrogen flow rate on the microstructure and optical properties of phosphorous doped hydrogenated amorphous silicon (a-Si:H(n)) films is studied through spectroscopic ellipsometry (SE). A series of a-Si:H(n) films were deposited usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5e82c7a99a9d853484d95e66861fc44
https://doi.org/10.1007/s11664-019-06965-6
https://doi.org/10.1007/s11664-019-06965-6
Publikováno v:
Thin Solid Films. 662:155-164
The effect of variation of radio frequency (rf) power on the structural, optical and electronic properties of intrinsic hydrogenated amorphous silicon (a-Si:H) films deposited at very low substrate temperature (Ts) 110 °C were studied. These films w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6375c15aa999a18f681ef9f059b970a5
https://doi.org/10.1016/j.tsf.2018.07.043
https://doi.org/10.1016/j.tsf.2018.07.043