Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Veniamin G. Stakhin"'
Autor:
Sergey O. Safonov, Veniamin G. Stakhin, Igor A. Kharitonov, Konstantin O. Petrosyants, Sergey V. Lebedev, Lev M. Sambursky
Publikováno v:
Microelectronics Reliability. 79:416-425
I-V characteristics and reliability parameters for the set of hardened SOI MOSFET's with special layouts and tungsten metallization to provide additional thermal tolerance for high-temperature SOI CMOS IC's are investigated in the temperature range u
Autor:
Igor A. Kharitonov, Konstantin O. Petrosyants, Sergey V. Lebedev, Lev M. Sambursky, Mamed R. Ismail-zade, Pavel V. Ignatov, Veniamin G. Stakhin
Publikováno v:
2017 33rd Thermal Measurement, Modeling & Management Symposium (SEMI-THERM).
SOI CMOS technology was developed for extended high temperature (HT) range applications (to 300 °C). MOSFETs come in two options: for digital applications with minimum gate length 0.18 µm and 1.8 V supply voltage and for analog applications with mi
Autor:
Veniamin G. Stakhin, Konstantin O. Petrosyants, Sergey V. Lebedev, Lev M. Sambursky, Igor A. Kharitonov
Publikováno v:
2016 22nd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC).
In this work, results of electrical measurements and their analysis are demonstrated for a small-scale 180-nm SOI CMOS technology in the extended temperature range (up to 300°C). Comparison with high temperature electrical characteristics of 0.5 μm