Zobrazeno 1 - 10
of 169
pro vyhledávání: '"Venger E. F."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5-6, Pp 10-15 (2020)
Despite the large number of scientific articles devoted to the development of cryogenic resistance thermometers, not many of these thermometers are mass-produced. As is know, semiconductor resistive temperature sensors have low magnetoresistance and
Externí odkaz:
https://doaj.org/article/311fff75210a4d41aa0ef64d959cae84
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 39-44 (2014)
Ge thin films condensation in vacuum onto semiinsulating GaAs(100) substrates was investigated. The methods of atomic-force microscopy, optical spectroscopy, measurement of intrinsic mechanical stresses in film, and electronic properties were used fo
Externí odkaz:
https://doaj.org/article/21eb4310bb3e46388a2b0850b758b724
Autor:
Venger, E. F.1, Morozhenko, V. O.1 morozh@meta.ua
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2023, Vol. 26 Issue 2, p180-187. 8p.
Autor:
Venger, E. F.1 vengeref@gmail.com, Venger, I. V.1 vengeriv@nas.gov.ua, Korsunska, N. O.1 Korsunska@ukr.net, Melnichuk, L. Yu.2 lyu.melnichuk@gmail.com, Melnichuk, O. V.2 mov310310@gmail.com, Khomenkova, L. Yu.1 khomen@ukr.net
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2018, Vol. 21 Issue 4, p417-423. 7p.
Autor:
Melnichuk, O. V., Melnichuk, L. Yu., Korsunska, N. O., Khomenkova, L. Yu., Venger, E. F., Venger, I. V.
Publikováno v:
Ukrainian Journal of Physics; Vol. 65 No. 2 (2020); 162
Український фізичний журнал; Том 65 № 2 (2020); 162
Український фізичний журнал; Том 65 № 2 (2020); 162
Для тонких плiвок MgxZn1−xO, нанесених на оптично-анiзотропних пiдкладках 6H-SiC, вперше було змодельовано спектри зовнiшнього iнфрачервоного в
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=issn20710194::fb9ceda27d3cb8544f4a06ff055e6fe6
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019511
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019511
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2017, Vol. 20 Issue 2, p224-230. 7p.
Publikováno v:
Ukrainian Journal of Physics; Vol. 61 No. 12 (2016); 1053
Український фізичний журнал; Том 61 № 12 (2016); 1053
Український фізичний журнал; Том 61 № 12 (2016); 1053
Using the IR reflection method and the modified method of disturbed total internal reflection (DTIR), thin undoped conducting ZnO films grown with the use of the atomic layer deposition method have been studied theoretically and experimentally for th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=issn20710194::c8bc3f4f65a9715076ae0966a53e342d
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019006
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2019006
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015, Vol. 18 Issue 4, p422-427. 6p.
Autor:
Piskovoi, V. N.1, Venger, E. F.1
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015, Vol. 18 Issue 3, p255-258. 4p.
Autor:
Matveeva, L. O., Venger, E. F., Konakova, R. V., Kolyadina, O. Yu., Neluba, P. L., Shynkarenko, V. V.
Publikováno v:
Physics and Chemistry of Solid State; Vol 18, No 2 (2017); 173-179
Фізика і хімія твердого тіла; Vol 18, No 2 (2017); 173-179
Фізика і хімія твердого тіла; Vol 18, No 2 (2017); 173-179
The results of a complex study of C60/Si heterosystems are presented in this work: the crystal structure and composition of the films, internal mechanical stresses, electronic parameters of the film and the film-substrate interface, and the effect of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=vasylstefany::3894c2fb66ed21fd123871aacf21eadc
http://journals.pu.if.ua/index.php/pcss/article/view/2292
http://journals.pu.if.ua/index.php/pcss/article/view/2292