Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Venema, P.R."'
Publikováno v:
In Energy Procedia 2011 8:515-520
33rd European Photovoltaic Solar Energy Conference and Exhibition; 967-969
In this paper, we present the results of the upgrade of a standard monocrystalline Aluminum Back Surface Field (Al-BSF) solar cell line to a passivated emitter and rear c
In this paper, we present the results of the upgrade of a standard monocrystalline Aluminum Back Surface Field (Al-BSF) solar cell line to a passivated emitter and rear c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1248c4b021934956249372c2bb84646c
Autor:
Stodolny, M.K., Janssen, G.J.M., Van Aken, B.B., Tool, C.J.J., Lamers, M.W.P.E., Romijn, I.G., Venema, P.R., Renes, M.R., Siareyeva, O., Granneman, E.H.A., Wang, J., Ma, J., Cui, J., Lang, F., Hu, Z., Löffler, J.
32nd European Photovoltaic Solar Energy Conference and Exhibition; 1908-1911
In this paper we report on the high stability of our n-type front junction solar cells (n-PERT) exposed to potential-induced degradation (PID) and UV-induced degradatio
In this paper we report on the high stability of our n-type front junction solar cells (n-PERT) exposed to potential-induced degradation (PID) and UV-induced degradatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e490f0924d6b7d5693cf86548523c56
http://resolver.tudelft.nl/uuid:dcbcd0f7-a5f3-424a-9be5-f769f0559e39
http://resolver.tudelft.nl/uuid:dcbcd0f7-a5f3-424a-9be5-f769f0559e39
Autor:
Saynova, D.S., Romijn, I.G., Cesar, I., Lamers, M.W.P.E., Gutjahr, A., Dingemans, G., Knoops, H.C.M., Van De Loo, B., Kessels, W.M.M., Siareyeva, O., Granneman, E.H.A., Gautero, L., Borsa, D.M., Venema, P.R., Vlooswijk, A.H.G.
28th European Photovoltaic Solar Energy Conference and Exhibition; 1188-1193
We investigate the impact of different dielectric layers and stacks on the passivation properties of boron doped p++-emitters and phosphorous doped n+-BSFs which are re
We investigate the impact of different dielectric layers and stacks on the passivation properties of boron doped p++-emitters and phosphorous doped n+-BSFs which are re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1e60eae152da1fbec8b1c89ecef152d
Autor:
Romijn, I.G., Van Aken, B.B., Anker, J., Barton, P., Gutjahr, A., Komatsu, Y., Koppes, M., Kossen, E.J., Lamers, M.W.P.E., Saynova, D.S., Tool, K.C.J.J., Zhang-Steenwinkel, Y., Venema, P.R., Vlooswijk, A.H.G., Schmitt, C., Kühnlein, H., Bay, N., König, M., Stassen, A.
28th European Photovoltaic Solar Energy Conference and Exhibition; 736-740
The n-Pasha cell is a bifacial solar cell concept with average efficiencies, depending on the material quality, between 19.8% and 20%. Our process has been optimized to e
The n-Pasha cell is a bifacial solar cell concept with average efficiencies, depending on the material quality, between 19.8% and 20%. Our process has been optimized to e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::051c61c0f464bb018c6b347ca0b05b1e
Autor:
Naber, R.C.G., Vlooswijk, A.H.G., Venema, P.R., Luchies, J.R.M., Derks, F., Chen, J., Hwang, J., Van Strien, W.J., Komatsu, Y., Mok, K.R.C., Nanver, L.K.
27th European Photovoltaic Solar Energy Conference and Exhibition; 1814-1817
Emitter and BSF/FSF formation by ion implantation and annealing is an emerging technology that can boost solar cell efficiencies in standard cell designs and enable hig
Emitter and BSF/FSF formation by ion implantation and annealing is an emerging technology that can boost solar cell efficiencies in standard cell designs and enable hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ae77ce4ce5b63b95aae4ac3c2b20e35
Autor:
Romijn, I.G., Van Aken, B.B., Anker, J., Burgers, A.R., Gutjahr, A., Heurtault, B., Koppes, M., Kossen, E., Lamers, M., Saynova, D.S., Tool, C.J.J., Lang, F., Li, G., Wang, H., Hu, Z., Venema, P.R., Vlooswijk, A.H.G.
27th European Photovoltaic Solar Energy Conference and Exhibition; 533-537
This paper describes the recent developments on the n-Pasha solar cell. The n-Pasha cell is a bifacial solar cell on n-type Cz material with homogeneous diffusions and pr
This paper describes the recent developments on the n-Pasha solar cell. The n-Pasha cell is a bifacial solar cell on n-type Cz material with homogeneous diffusions and pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa2b4bfda6f75ff8a3a551506b27a022
Autor:
Borland, J., Chen, J., Oesterlin, P., Venema, P.R., Geerman, H., Lee, Y.-J., Zhao, P., Wang, L., Xu, B., Qin, S.
27th European Photovoltaic Solar Energy Conference and Exhibition; 1278-1284
We compared POCl3 and BBr3 furnace diffused dopant source to phosphorus and boron implanted dopant as well as BF3 and arsenic plasma implant dopant sources for selectiv
We compared POCl3 and BBr3 furnace diffused dopant source to phosphorus and boron implanted dopant as well as BF3 and arsenic plasma implant dopant sources for selectiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d341ac6385a00b44ec99ce68157edf6
Autor:
Burgers, A.R., Geerligs, L.J., Carr, A.J., Gutjahr, A., Saynova, D.S., Li, L., Zhuo, X., Hongfang, W., Haijiao, A., Hu, H., Venema, P.R., Vlooswijk, A.H.G.
26th European Photovoltaic Solar Energy Conference and Exhibition; 1144-1147
We present the status of our process development of silicon solar cells on n-type base material, and progress towards its industrial implementation. Independently confi
We present the status of our process development of silicon solar cells on n-type base material, and progress towards its industrial implementation. Independently confi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::929824e3c43a09e3ffc4951e637dceed
26th European Photovoltaic Solar Energy Conference and Exhibition; 1340-1344
The phosphorus concentration in the n++ layer (top layer of a phosphorus emitter) was lowered by either thinning or thickening the phosphosilicate glass (PSG) film as t
The phosphorus concentration in the n++ layer (top layer of a phosphorus emitter) was lowered by either thinning or thickening the phosphosilicate glass (PSG) film as t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd479302730db917cf3179fcdc4b2ede