Zobrazeno 1 - 10
of 86
pro vyhledávání: '"Velichko, O. I."'
Autor:
Velichko, O. I.
A comprehensive model of high-concentration phosphorus diffusion has been developed and simulation of phosphorus diffusion from a constant source (phosphosilicate glass) at a temperature of 890 Celsius degrees for 14.25 min. has been carried out. Suc
Externí odkaz:
http://arxiv.org/abs/1905.10667
Autor:
Velichko, O. I.
The mechanism underlying the long-range interstitial migration of nonequilibrium impurity interstitial species is used to simulate arsenic redistribution in ion implantation. An excellent agreement of the calculated arsenic concentration profiles wit
Externí odkaz:
http://arxiv.org/abs/1506.03314
Autor:
Velichko, O. I.
An analysis of the equations used for modeling thermal arsenic diffusion in silicon has been carried out. It was shown that for arsenic diffusion governed by the vacancy-impurity pairs and the pairs formed due to interaction of impurity atoms with si
Externí odkaz:
http://arxiv.org/abs/1504.06717
Autor:
Velichko, O. I.
A model of interstitial impurity migration is proposed which explains the redistribution of ion-implanted boron in low-temperature annealing of nonamorphized silicon layers. It is supposed that nonequilibrium boron interstitials are generated either
Externí odkaz:
http://arxiv.org/abs/1504.03351
Autor:
Velichko, O. I.
Modeling of the phosphorus radiation-enhanced diffusion in the course of implantation of high-energy protons into an elevated-temperature silicon substrate and during its treatment in a hydrogen-containing plasma with addition of a diffusant has been
Externí odkaz:
http://arxiv.org/abs/1410.6195
Autor:
Velichko, O. I.
The analytical solution of the equation describing diffusion of intrinsic point defects has been obtained for a one-dimensional finite-length domain. This solution is intended for investigating and modeling the changes in defect distributions during
Externí odkaz:
http://arxiv.org/abs/1406.6433
The model of hydrogen migration and of the reactions of hydrogen atoms with electrically active impurity, developed earlier, has been applied to simulate hydrogen diffusion and passivation process during plasma deuteration of silicon substrates doped
Externí odkaz:
http://arxiv.org/abs/1301.5532
Autor:
Velichko, O. I., Kavaliova, A. P.
Modeling of ion-implanted boron redistribution in silicon crystals during low-temperature annealing with a small thermal budget has been carried out. It was shown that formation of "tails"' in the low-concentration region of impurity profiles occurs
Externí odkaz:
http://arxiv.org/abs/1207.3512
Autor:
Velichko, O. I., Kavaliova, A. P.
Modeling of the long-range migration of boron interstitials during low temperature annealing of ion-implanted silicon crystals has been carried out.
Comment: 4 pages, 2 figures
Comment: 4 pages, 2 figures
Externí odkaz:
http://arxiv.org/abs/1207.0794
Autor:
Velichko, O. I., Kavaliova, A. P.
It has been shown that many of the phenomena related to the formation of "tails" in the low-concentration region of ion-implanted impurity distribution are due to the anomalous diffusion of nonequilibrium impurity interstitials. These phenomena inclu
Externí odkaz:
http://arxiv.org/abs/1108.4154