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pro vyhledávání: '"Velev, J. P."'
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Publikováno v:
Phys. Rev. B 96, 214430 (2017)
We present theoretical studies of the intrinsic spin orbit torque (SOT) in a single domain ferromagnetic layer with Rashba spin-orbit coupling (SOC) using the non-equilibrium Green's function formalism for a model Hamiltonian. We find that, to the fi
Externí odkaz:
http://arxiv.org/abs/1604.07885
Publikováno v:
Phys. Rev. B 89, 064509 (2014)
Using noncollinear first-principles calculations we perform a systematic study of the magnetic order in several families of ferropnictides. We find a fairly universal energy dependence on the magnetization order in all cases. Our results confirm that
Externí odkaz:
http://arxiv.org/abs/1401.1527
Autor:
Wang, Y., Niranjan, M. K., Janicka, K., Velev, J. P., Zhuravlev, M. Ye., Jaswal, S. S., Tsymbal, E. Y.
Publikováno v:
Phys. Rev. B 82, 094114 (2010)
Based on first-principles and model calculations we investigate the effect of polar interfaces on the ferroelectric stability of thin-film ferroelectrics. As a representative model, we consider a TiO2-terminated BaTiO3 film with LaO monolayers at the
Externí odkaz:
http://arxiv.org/abs/1004.2414
Publikováno v:
Physical Review B, 80 115408 (2009).
The discovery of a two-dimensional electron gas (2DEG) at the interface between insulating oxides has led to a well-deserved level of excitement due to possible applications as "in-plane" all-oxide nanoelectronics. Here we expand the range of possibi
Externí odkaz:
http://arxiv.org/abs/0906.3543
First-principles calculations of electron tunneling transport in Ni and Co break junctions reveal strong dependence of the conductance on the magnetization direction, an effect known as tunneling anisotropic magnetoresistance (TAMR). The origin of th
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703345
Spin-disorder resistivity of Fe and Ni is studied using the noncollinear density functional theory. The Landauer conductance is averaged over random disorder configurations and fitted to Ohm's law. The distribution function is approximated by the mea
Externí odkaz:
http://arxiv.org/abs/cond-mat/0611377
Autor:
Tsymbal, E. Y., Belashchenko, K. D., Velev, J. P., Jaswal, S. S., van Schilfgaarde, M., Oleynik, I. I., Stewart, D. A.
Publikováno v:
Progress in Materials Science, 52, 401 (2007)
In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs
Externí odkaz:
http://arxiv.org/abs/cond-mat/0511663
Publikováno v:
Phys. Rev. B 72, 140404(R) (2005)
The electronic structure and spin-dependent tunneling in epitaxial Fe/MgO/Fe(001) tunnel junctions are studied using first-principles calculations. For small MgO barrier thickness the minority-spin resonant bands at the two interfaces make a signific
Externí odkaz:
http://arxiv.org/abs/cond-mat/0505348
Publikováno v:
Phys. Rev. Lett. 94, 127203 (2005)
Electronic transport in ferromagnetic ballistic conductors is predicted to exhibit ballistic anisotropic magnetoresistance (BAMR) - a change in the ballistic conductance with the direction of magnetization. This phenomenon originates from the effect
Externí odkaz:
http://arxiv.org/abs/cond-mat/0412637