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In the field of power electronics, the compound semiconductors gallium ni tride and silicon carbide are dominating the market. Due to its beneficial properties, gallium arsenide is gaining more and more importance. The aim is to manufacture devices b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::ba5593681787dd4c2976301fd9801d40
https://publica.fraunhofer.de/handle/publica/418760
https://publica.fraunhofer.de/handle/publica/418760