Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Veerle Simons"'
Autor:
David Coenen, Kristof Croes, Artemisia Tsiara, Herman Oprins, Veerle Simons, Olalla Varela Pedreira, Yoojin Ban, Joris Van Campenhout, Ingrid De Wolf
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 22:417-423
Publikováno v:
ECS Transactions. 86:397-407
Publikováno v:
ECS Meeting Abstracts. :1070-1070
Raman spectroscopy is often used to determine the composition and strain in Si1-xGex films and structures. It is a fast, non-destructive technique that can give results with a spatial resolution at the micron-scale, and even information on nm-sized s
Autor:
Hans Goverde, Shuji Tanaka, Ingrid De Wolf, Veerle Simons, Bart Vermang, R. Mertens, Johan Meersschaut, Jef Poortmans, Joachim John
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
This work investigates the formation of blisters during annealing an Al 2 O 3 film grown by atomic layer deposition (ALD) on Si. This blistering phenomenon is shown to occur under an external load in the presence of a tensile residual stress: the tot
Autor:
Geert Van der Plas, Paresh Limaye, Abdelkarim Mercha, Herman Oprins, Cristina Torregiani, Steven Thijs, Dimitri Linten, Michele Stucchi, Katti Guruprasad, Dimitrios Velenis, Domae Shinichi, Vladimir Cherman, Bart Vandevelde, Veerle Simons, Ingrid De Wolf, Riet Labie, Dan Perry, Stephane Bronckers, Nikolas Minas, Miro Cupac, Wouter Ruythooren, Jan Van Olmen, Alain Phommahaxay, Muriel de Potter de ten Broeck, Ann Opdebeeck, Michal Rakowski, Bart De Wachter, Morin Dehan, Marc Nelis, Rahul Agarwal, Wim Dehaene, Youssef Travaly, Pol Marchal, Eric Beyne
Publikováno v:
2010 IEEE International Solid-State Circuits Conference - (ISSCC).
Publikováno v:
SPIE Proceedings.
After a short introduction on the theory and instrumentation of Raman spectroscopy, its application for local stress and temperature measurements in semiconductor devices is discussed. Examples are given for silicon isolation structures, transistors,
Publikováno v:
SPIE Proceedings.
We present a new material for highly resistive heaters: thin Ti/TiN layers. Their resistivity is indeed comparable to the resistivity of NiCr, i.e. 50-100 micro-Ohn-cm. However, as opposed to the latter material, Ti/TiN is CMOS compatible and thus ea
Autor:
Cor Claeys, Geert Eneman, Eddy Simoen, Romain Delhougne, Peter Verheyen, Veerle Simons, Roger Loo, M. Caymax, Kristin De Meyer, Wilfried Vandervorst
Publikováno v:
ECS Meeting Abstracts. :717-717
not Available.
Autor:
Coenen, David, Croes, Kristof, Tsiara, Artemisia, Oprins, Herman, Simons, Veerle, Pedreira, Olalla Varela, Ban, Yoojin, Van Campenhout, Joris, De Wolf, Ingrid
Publikováno v:
IEEE Transactions on Device & Materials Reliability; Sep2022, Vol. 22 Issue 3, p417-423, 7p
Publikováno v:
Architectural Journal / Jian Zhu Xue Bao; 2022, p39-44, 6p