Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Veerle Geens"'
Autor:
Jan Van Steenbergen, Veerle Geens, Paul Mertens, Stefan De Gendt, David Hellin, Geoffroy Raskin, Ivo Teerlinck, Jens Rip, Wim Laureyn, Christiaan Vinckier
Publikováno v:
Solid State Phenomena. :213-216
Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices, due to their enhanced intrinsic mobility [1]. Specifications towards tolerable metallic contamination levels
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d581a135240151ae68caa91e20723dd1
https://doi.org/10.4028/www.scientific.net/ssp.103-104.213
https://doi.org/10.4028/www.scientific.net/ssp.103-104.213
Autor:
J. Van Steenbergen, Jens Rip, David Hellin, G. Raskin, Veerle Geens, S. De Gendt, Christiaan Vinckier, Ivo Teerlinck, Paul W. Mertens, W. Laureyn
Publikováno v:
Spectrochimica Acta Part B: Atomic Spectroscopy. 60:209-213
Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The reintroduction of this material requires reengineering of the standard IC processing steps. In this pape
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d88ce4356a3a18a4756f842fb1242bca
https://doi.org/10.1016/j.sab.2004.10.013
https://doi.org/10.1016/j.sab.2004.10.013
Autor:
Christiaan Vinckier, Veerle Geens, David Hellin, Jens Rip, Tinne Delande, S. De Gendt, Thierry Conard
Publikováno v:
Journal of Analytical Atomic Spectrometry. 20:652
In metallic contamination analysis of semiconductor wafers, preconcentration methods such as vapor phase decomposition–droplet collection (VPD-DC) or droplet sandwich etch (DSE) are combined with sensitive analytical techniques, often total-reflect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d641ebf22f502708d20851da18029b00
https://doi.org/10.1039/b502208h
https://doi.org/10.1039/b502208h