Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Veerendra, Dhyani"'
Autor:
Xiaodong Shi, Sakthi Sanjeev Mohanraj, Veerendra Dhyani, Angela Anna Baiju, Sihao Wang, Jiapeng Sun, Lin Zhou, Anna Paterova, Victor Leong, Di Zhu
Publikováno v:
Light: Science & Applications, Vol 13, Iss 1, Pp 1-10 (2024)
Abstract Integrated photon-pair sources are crucial for scalable photonic quantum systems. Thin-film lithium niobate is a promising platform for on-chip photon-pair generation through spontaneous parametric down-conversion (SPDC). However, the device
Externí odkaz:
https://doaj.org/article/2e9cbcdf7aa645faa309e23451aec023
Autor:
Sihao Wang, Veerendra Dhyani, Sakthi Sanjeev Mohanraj, Xiaodong Shi, Binni Varghese, Wing Wai Chung, Ding Huang, Zhi Shiuh Lim, Qibin Zeng, Huajun Liu, Xianshu Luo, Victor Leong, Nanxi Li, Di Zhu
Publikováno v:
APL Photonics, Vol 9, Iss 6, Pp 066109-066109-7 (2024)
Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for integrated photonics due to its favorable nonlinear optical properties and compatibility with complementary metal–oxide semiconductor (CMOS) fabrication. Despite t
Externí odkaz:
https://doaj.org/article/dde33a63ed3c43d8b120cb60abb13672
Autor:
John Wellington John, Veerendra Dhyani, Alka Jakhar, Harmanpreet Kaur Sandhu, Sheetal Dewan, Samit K. Ray, Samaresh Das
Publikováno v:
IEEE Electron Device Letters. 43:1495-1498
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18fb03edcf1d921d9285be0d4d62fc9f
https://doi.org/10.1109/led.2022.3193724
https://doi.org/10.1109/led.2022.3193724
Publikováno v:
ACS Applied Nano Materials. 3:10767-10777
The amplitude of terahertz (THz) waves is modulated optically by a pumping laser source, and the effect of optical power on modulation depth is systematically investigated in this work. The reporte...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::237519c100a24c2d5a2644de93c1a905
https://doi.org/10.1021/acsanm.0c02076
https://doi.org/10.1021/acsanm.0c02076
Autor:
Pranaba Kishor Muduli, Wasi Uddin, Vikram Kumar, Gufran Ahmad, Veerendra Dhyani, Samaresh Das
Publikováno v:
ACS Applied Electronic Materials. 2:1567-1573
This paper reports the light-induced negative differential transconductance (NDT) in an n-type MoSe2 and highly doped p-type germanium (Ge) heterojunction transistor. A fully complementary-metal–ox...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fee3d7ffe311f3f6de7fc1183df3c420
https://doi.org/10.1021/acsaelm.0c00178
https://doi.org/10.1021/acsaelm.0c00178
Publikováno v:
IEEE Transactions on Electron Devices. 67:558-565
In this article, size-dependent photoresponse characteristics and low-frequency noise behavior of high-speed germanium nanocrystals (nc-Ge) photodetector have been reported. The nc-Ge embedded in SiO2 matrix with different sizes have been synthesized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d412693af2b5f63ca909db625130414f
https://doi.org/10.1109/ted.2019.2961738
https://doi.org/10.1109/ted.2019.2961738
Autor:
John Wellington J, Veerendra Dhyani, Sarmistha Maity, Subharjit Mukherjee, Samit K Ray, Samaresh Das
Publikováno v:
2020 5th IEEE International Conference on Emerging Electronics (ICEE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21d541626515c6eac77f00f690e80b0e
https://doi.org/10.1109/icee50728.2020.9776758
https://doi.org/10.1109/icee50728.2020.9776758
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
A CMOS compatible MoSe 2 /Ge heterojunction field effect transistor has been fabricated. The electrical characterization of asymmetric contact device has been studied by switching the source contact. Temperature dependent measurements reveals a barri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2201b287445b1d04eca319e362d703f7
https://doi.org/10.1109/vlsi-tsa48913.2020.9203706
https://doi.org/10.1109/vlsi-tsa48913.2020.9203706
Autor:
Samaresh Das, Justin D. Holmes, John Wellington John, Amit K. Das, Samit K. Ray, Subhajit Biswas, Yordan M. Georgiev, Veerendra Dhyani, Anushka S. Gangnaik
Publikováno v:
ACS Applied Electronic Materials 2(2020)7, 1934-1942
Here, we report the observation of negative photoconductance (NPC) effect in highly arsenic-doped germanium nanowires (Ge NWs) for the infrared light. NPC was studied by light-assisted Kelvin probe force microscopy, which shows the depletion of carri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31d43921873c0b1dea9959887f31585c
https://hdl.handle.net/10468/10476
https://hdl.handle.net/10468/10476
Autor:
John Wellington, John, Veerendra, Dhyani, Sarmistha, Maity, Subhrajit, Mukherjee, Samit K, Ray, Vikram, Kumar, Samaresh, Das
Publikováno v:
Nanotechnology. 31(45)
Transition metal dichalcogenides (TMDs) and their heterojunctions are drawing immense research interest for various applications including infrared detection. They are being studied with different semiconductor materials to explore their heterojuncti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::7cbc8d94acea5a3f4e78d1f437987988
https://pubmed.ncbi.nlm.nih.gov/32442984
https://pubmed.ncbi.nlm.nih.gov/32442984