Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Veerabadra Chary"'
Publikováno v:
In Materials Today: Proceedings 2017 4(9):10309-10314
Publikováno v:
Materials Today: Proceedings. 4:10309-10314
SRAM cell stability is the primary concern for future technologies due to process variations like threshold voltage and supply voltage scaling etc. The increased effect of process variation and increase in parasitic resistance and capacitance in Nano
Publikováno v:
International Journal of Engineering & Technology. 6:78
The objective of this paper is to demonstrate how to improve the read stability of the SRAM cell using the read assist technique. SRAM cell stability is the primary concern for the present and future technologies due to process variations like Vt and
Autor:
Donald Albert Evans, N. Sathisha, Venkateswara Reddy, Dharmendra Kumar Rai, Richard J. Stephani, Ankur Goel, Veerabadra Chary
Publikováno v:
VLSI Design
Reducing the leakage power in embedded SRAM memories is critical for low-power applications. Raising the source voltage of SRAM cells through diode transistor in standby mode reduces the leakage currents effectively. However, in order to preserve the
Publikováno v:
i-Manager's Journal on Circuits & Systems; Sep-Nov2016, Vol. 4 Issue 4, p1-5, 5p, 4 Diagrams, 1 Chart, 2 Graphs
Publikováno v:
2012 25th International Conference on VLSI Design; 1/ 1/2012, pv-xiii, 9p