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pro vyhledávání: '"Veera Venkata Sai Amudalapalli"'
Autor:
Asisa Kumar Panigrahy, Veera Venkata Sai Amudalapalli, Depuru Shobha Rani, Muralidhar Nayak Bhukya, Hima Bindu Valiveti, Vakkalakula Bharath Sreenivasulu, Raghunandan Swain
Publikováno v:
IEEE Access, Vol 12, Pp 73160-73168 (2024)
This work investigates the effect of single and dual-k spacer materials consisting of different dielectric constants (k) in optimized nano-channel gate-stack nanosheet (NS-FET) employing hafnium oxide and silicon dioxide as gate insulator to improve
Externí odkaz:
https://doaj.org/article/add9fc6864b041c39c460023a32e423d
