Zobrazeno 1 - 10
of 246
pro vyhledávání: '"Veena Misra"'
Autor:
Viswanath Padmanabhan Ramesh, Yasaman Sargolzaeiaval, Taylor Neumann, Veena Misra, Daryoosh Vashaee, Michael D. Dickey, Mehmet C. Ozturk
Publikováno v:
npj Flexible Electronics, Vol 5, Iss 1, Pp 1-12 (2021)
Abstract Harvesting body heat using thermoelectricity provides a promising path to realizing self-powered, wearable electronics that can achieve continuous, long-term, uninterrupted health monitoring. This paper reports a flexible thermoelectric gene
Externí odkaz:
https://doaj.org/article/9a85fae2d33b417fa89cea2b37f7195a
Publikováno v:
IEEE Internet Computing. 27:7-14
Autor:
Yilu Zhou, Farzad Mohaddes, Courtney Lee, Smriti Rao, Amanda C. Mills, Adam C. Curry, Bongmook Lee, Veena Misra
Publikováno v:
IEEE Sensors Journal. 22:18970-18977
Autor:
Yasaman Sargolzaeiaval, Taylor V. Neumann, Mehmet C. Öztürk, Michael D. Dickey, Daryoosh Vashaee, Viswanath Padmanabhan Ramesh, Veena Misra
Publikováno v:
npj Flexible Electronics, Vol 5, Iss 1, Pp 1-12 (2021)
Harvesting body heat using thermoelectricity provides a promising path to realizing self-powered, wearable electronics that can achieve continuous, long-term, uninterrupted health monitoring. This paper reports a flexible thermoelectric generator (TE
Autor:
Emran K Ashik, Sundar B Isukapati, Hua Zhang, Tianshi Liu, Utsav Gupta, Adam J Morgan, Veena Misra, Woongje Sung, Ayman Fayed, Anant K. Agarwal, Bongmook Lee
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Publikováno v:
IEEE Transactions on Electron Devices. 67:881-887
Typically GaN metal-oxide-semiconductor heterojunction-field-effect transistors (MOS-HFETs) have used two separate dielectrics for the gate and access regions. However, as this article shows, with proper gate-stack engineering, a unified dielectric s
Autor:
Tahmid Latif, James Dieffenderfer, Akhilesh Tanneeru, Bongmook Lee, Veena Misra, Alper Bozkurt
Publikováno v:
2021 IEEE Sensors.
Publikováno v:
2021 IEEE Sensors.
Publikováno v:
IEEE Transactions on Electron Devices. 66:539-545
We report the effects of lanthanum-rich layer thickness and forming gas anneal (FGA) conditions on mobility and threshold voltage ( ${V} _{{\text {T}}}$ ) instability of high-mobility 4H-SiC MOSFETs using lanthanum silicate (LaSiO x ) interface engin
Autor:
Edgar Lobaton, James Dieffenderfer, Yuwei Liao, Tahmid Latif, Michelle L. Hernandez, Alper Bozkurt, Laura Gonzalez, Veena Misra
Publikováno v:
Web of Science
Multi-modal wearable sensors monitoring physiology and environment simultaneously would offer a great promise to manage respiratory health, especially for asthmatic patients. In this study, we present a preliminary investigation of the correlation be