Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Ved Gund"'
Publikováno v:
Journal of Microelectromechanical Systems. 31:500-523
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae949e0f7488d861f0bf230ac073ddde
https://doi.org/10.1109/jmems.2022.3172766
https://doi.org/10.1109/jmems.2022.3172766
Publikováno v:
2023 IEEE 36th International Conference on Micro Electro Mechanical Systems (MEMS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8444033937185943bb7b4fd87edb9bbe
https://doi.org/10.1109/mems49605.2023.10052285
https://doi.org/10.1109/mems49605.2023.10052285
Publikováno v:
2022 IEEE International Symposium on Applications of Ferroelectrics (ISAF).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3d8c98374ebff95456dfd6aeafaa05a
https://doi.org/10.1109/isaf51494.2022.9870089
https://doi.org/10.1109/isaf51494.2022.9870089
Autor:
Ved Gund, Benyamin Davaji, Shubham Jadhav, Hyunjea Lee, Debdeep Jena, Huili Grace Xing, Amit Lal
Publikováno v:
2022 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::995a0f15b71e568f1be1745fc7cd6bd7
https://doi.org/10.1109/eftf/ifcs54560.2022.9850768
https://doi.org/10.1109/eftf/ifcs54560.2022.9850768
Autor:
Rohan Sanghvi, Khurram K. Afridi, Qing Ji, Ved Gund, Amit Lal, Thomas Schenkel, Elaine M. Petro, Di Ni
Publikováno v:
AIAA Propulsion and Energy 2021 Forum.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6ffce2236ea8db488cdd67d0e8c78b5
https://doi.org/10.2514/6.2021-3246
https://doi.org/10.2514/6.2021-3246
Autor:
Joseph Casamento, Amit Lal, Debdeep Jena, Benyamin Davaji, Ved Gund, Hyunjea Lee, Huili Grace Xing
Publikováno v:
2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers).
In this paper, we map the ferroelectric properties of 22% and 30% scandium-doped aluminum nitride (ScAlN) thin films with the goal to engineer low coercive fields for low-voltage post-CMOS compatible RF frontends. ScAlN films, 200 nm and 300 nm thick
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3ba21ac077bfc5e2ea40dbfaf44aa90
https://doi.org/10.1109/transducers50396.2021.9495515
https://doi.org/10.1109/transducers50396.2021.9495515
Publikováno v:
2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers).
This paper reports a new design for a miniature pyroelectric kilovolt power supply, which converts 15.5 volts to 1460 volts in a compact format ( 3 crystal, a cantilever mechanical switch as a mechanical rectifying voltage regulator, and a capacitor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb5c7227f08fb6ec4af22849f55b8090
https://doi.org/10.1109/transducers50396.2021.9495642
https://doi.org/10.1109/transducers50396.2021.9495642
Autor:
Debdeep Jena, Ved Gund, Joseph Casamento, Hyunjea Lee, Benyamin Davaji, Amit Lal, Mohammad Javad Asadi, Huili Grace Xing
Publikováno v:
2021 IEEE International Symposium on Applications of Ferroelectrics (ISAF).
This paper reports the temperature-dependent ferroelectric properties of sputtered ferroelectric Al 0.70 Sc 0.30 N. The coercive field is experimentally demonstrated to decrease by 1.5 MV/cm in 300 nm films in the temperature range of 20– 193 0C, c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d66b1fdb5e0aa8e2012bf78564c3e6d7
https://doi.org/10.1109/isaf51943.2021.9477328
https://doi.org/10.1109/isaf51943.2021.9477328
Publikováno v:
2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS).
This paper reports a graphene-on-polymer vaporizable and flexible piezoresistive sensor platform. This sensor technology can be used for wearable microsystems and disposable environmental sensors. The piezoresistive pressure sensor reported here achi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8cda5ed2a43a72481b0432ea3b2389c
https://doi.org/10.1109/mems51782.2021.9375341
https://doi.org/10.1109/mems51782.2021.9375341
Publikováno v:
2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF).
In this paper, the bulk-wave excitation and sense properties of solidly mounted AlScN and AlN bulk-wave transducers itegrated onto CMOS substrates is presented. The AlN is fabricated at Silterra Malaysia, and the Al 0.85 Sc 0.15 N transducer is fabri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e967692c83c808ec1ca747ab17966fe
https://doi.org/10.1109/ifcs-isaf41089.2020.9234939
https://doi.org/10.1109/ifcs-isaf41089.2020.9234939