Nitrogen pair-induced temperature insensitivity of the band gap of GaNSb alloys

Autor: Linhart, Wojciech, Rajpalke, Mohana, Birkett, Max, Walker, David, Ashwin, Mark J, Veal, TD

Publikováno v: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Journal of Physics D: Applied Physics

The temperature dependence of the band gap of GaN x Sb1−x films with x ≤ 1.3% has been studied in the 1.1–3.3 m (0.35–1.1 eV) range using infrared absorption spectroscopy between 4.2 and 300 K. As with other dilute nitride semiconductors, the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5b5f7ebb8776162869bce38365ac7774
http://livrepository.liverpool.ac.uk/3029007/2/LinhartJPhysDApplPhys52(2019)045105.pdf

Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3 N

Autor: Birkett, M, Savory, CN, Fioretti, AN, Thompson, P, Muryn, CA, Weerakkody, AD, Mitrovic, IZ, Hall, S, Treharne, R, Dhanak, VR, Scanlon, DO, Zakutayev, A, Veal, TD

Publikováno v: Birkett, M, Savory, C N, Fioretti, A N, Thompson, P, Muryn, C A, Weerakkody, A D, Mitrovic, I Z, Hall, S, Treharne, R, Dhanak, V R, Scanlon, D O, Zakutayev, A & Veal, T D 2017, ' Atypically small temperature-dependence of the direct band gap in the metastable semiconductor copper nitride Cu3 N ', Physical Review B-Condensed Matter and Materials Physics, vol. 95, no. 11, 115201 . https://doi.org/10.1103/PhysRevB.95.115201
Physical Review B-Condensed Matter and Materials Physics

The temperature-dependence of the direct band gap and thermal expansion in the metastable anti-ReO3 semiconductor Cu3N are investigated between 4.2 and 300 K by Fourier-transform infrared spectroscopy and x-ray diffraction. Complementary refractive i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::33b0d80c3a01b43816246c432cc3aa8e
https://research.manchester.ac.uk/en/publications/e766e68d-0e52-41a5-8e05-29355e29a3d7

Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires

Autor: Speckbacher, M, Treu, J, Whittles, TJ, Linhart, WM, Xu, X, Saller, K, Dhanak, VR, Abstreiter, G, Finley, JJ, Veal, TD, Koblmüller, G

Publikováno v: Nano Letters: a journal dedicated to nanoscience and nanotechnology

Surface effects strongly dominate the intrinsic properties of semiconductor nanowires (NWs), an observation that is commonly attributed to the presence of surface states and their modification of the electronic band structure. Although the effects of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::ff5151b43973953671746a025f842134
http://livrepository.liverpool.ac.uk/3002871/1/Manuscript_PLXPS_InGaAsNW_author_version.pdf

Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3

Autor: King, PDC, Veal, TD, Fuchs, F, Wang, CY, Payne, DJ, Bourlange, A, Zhang, H, Bell, GR, Cimalla, V, Ambacher, O, Egdell, RG, Bechstedt, F, McConville, CF

The bulk and surface electronic structure of In2 O3 has proved controversial, prompting the current combined experimental and theoretical investigation. The band gap of single-crystalline In2 O3 is determined as 2.93±0.15 and 3.02±0.15 eV for the c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6b7c8e0312530209d1b105643662f949
https://publica.fraunhofer.de/handle/publica/218690

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