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pro vyhledávání: '"Véronique Rizzo"'
Autor:
Nicolas Pic, Gennadi Polisski, Emmanuel Paire, Véronique Rizzo, Catherine Grosjean, Benjamin Bortolotti, John D’Amico, Nicolas Cabuil, Erik M. Secula, David G. Seiler, Rajinder P. Khosla, Dan Herr, C. Michael Garner, Robert McDonald, Alain C. Diebold
Publikováno v:
AIP Conference Proceedings.
The continuous race to reduce the dimensions of IC components has lead to the introduction of Nitrogen in the thin gate oxide layer in order to increase the dielectric constant and to improve the gate dielectric properties. It is mandatory to apply i