Zobrazeno 1 - 10
of 134
pro vyhledávání: '"Vdovin, E. P."'
Autor:
Vdovin, E. E., Greenaway, M. T., Khanin, Yu. N., Morozov, S. V., Makarovsky, O., Patanè, A., Mishchenko, A., Slizovskiy, S., Fal'ko, V. I., Geim, A. K., Novoselov, K. S., Eaves, L.
Publikováno v:
Communications Physics volume 6, Article number: 159 (2023)
Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity
Externí odkaz:
http://arxiv.org/abs/2307.01757
Publikováno v:
J. Algebra, 2022, Vol. 607, Part A, 618-637
Let $m$ be a positive integer and let $\Omega$ be a finite set. The $m$-closure of $G\leq\operatorname{Sym}(\Omega)$ is the largest permutation group on $\Omega$ having the same orbits as $G$ in its induced action on the Cartesian product $\Omega^m$.
Externí odkaz:
http://arxiv.org/abs/2012.14166
Autor:
Greenaway, M. T., Vdovin, E. E., Ghazaryan, D., Misra, A., Mishchenko, A., Cao, Y., Wang, Z., Wallbank, J. R., Holwill, M., Khanin, Yu. N., Morozov, S. V., Watanabe, K., Taniguchi, T., Makarovsky, O., Fromhold, T. M., Patanè, A., Geim, A. K., Fal'ko, V. I., Novoselov, K. S., Eaves, L.
Publikováno v:
Communications Physics 1, 94 (2018)
Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant
Externí odkaz:
http://arxiv.org/abs/1810.01312
Autor:
Vdovin, E. E., Mishchenko, A., Greenaway, M. T., Zhu, M. J., Ghazaryan, D., Misra, A., Cao, Y., Morozov, S. V., Makarovsky, O., Patanè, A., Slotman, G. J., Katsnelson, M. I., Geim, A. K., Novoselov, K. S., Eaves, L.
Publikováno v:
Phys. Rev. Lett. 116, 186603 (2016)
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron tunneling ass
Externí odkaz:
http://arxiv.org/abs/1512.02143
Autor:
Greenaway, M. T., Vdovin, E. E., Mishchenko, A., Makarovsky, O., Patanè, A., Wallbank, J. R., Cao, Y., Kretinin, A. V., Zhu, M. J., Morozov, S. V., Fal'ko, V. I., Novoselov, K. S., Geim, A. K., Fromhold, T. M., Eaves, L.
Publikováno v:
Nature Physics 11, 1057-1062 (2015)
A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of suc
Externí odkaz:
http://arxiv.org/abs/1509.06208
Autor:
Revin, D. O., Vdovin, E. P.
A subgroup $H$ of a group $G$ is called {\it pronormal}, if for every $g\in G$ subgroups $H$ and $H^g$ are conjugate in $\langle H, H^g\rangle$. It is proven that if a finite group $G$ possesses a $\pi$-Hall subgroup for a set of primes $\pi$, the ev
Externí odkaz:
http://arxiv.org/abs/1504.02834
Autor:
Vdovin, E. P.
In the note we prove that all composition factors of a finite group possessing a Carter subgroup of odd order either are abelain, or are isomorphic to $L_2(3^{2n+1})$.
Externí odkaz:
http://arxiv.org/abs/1503.08907
Autor:
Mishchenko, A., Tu, J. S., Cao, Y., Gorbachev, R. V., Wallbank, J. R., Greenaway, M. T., Morozov, V. E., Morozov, S. V., Zhu, M. J., Wong, S. L., Withers, F., Woods, C. R., Kim, Y. -J., Watanabe, K., Taniguchi, T., Vdovin, E. E., Makarovsky, O., Fromhold, T. M., Falko, V. I., Geim, A. K., Eaves, L., Novoselov, K. S.
Publikováno v:
Nature Nanotechnology 9, 808-813 (2014)
Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the reali
Externí odkaz:
http://arxiv.org/abs/1409.2263
Autor:
Ivanov, I. P., Vdovin, E.
We report the recent progress in understanding of symmetries which can be implemented in the scalar sector of electroweak symmetry breaking models with several Higgs doublets. In particular we present the list of finite reparametrization symmetry gro
Externí odkaz:
http://arxiv.org/abs/1211.0647
Autor:
Ivanov, I. P., Vdovin, E.
Publikováno v:
Eur. Phys. J. C 73, 2309 (2013)
Symmetries play a crucial role in electroweak symmetry breaking models with non-minimal Higgs content. Within each class of these models, it is desirable to know which symmetry groups can be implemented via the scalar sector. In N-Higgs-doublet model
Externí odkaz:
http://arxiv.org/abs/1210.6553