Zobrazeno 1 - 10
of 163
pro vyhledávání: '"Vdovin, E. E."'
Autor:
Vdovin, E. E., Greenaway, M. T., Khanin, Yu. N., Morozov, S. V., Makarovsky, O., Patanè, A., Mishchenko, A., Slizovskiy, S., Fal'ko, V. I., Geim, A. K., Novoselov, K. S., Eaves, L.
Publikováno v:
Communications Physics volume 6, Article number: 159 (2023)
Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity
Externí odkaz:
http://arxiv.org/abs/2307.01757
Autor:
Greenaway, M. T., Vdovin, E. E., Ghazaryan, D., Misra, A., Mishchenko, A., Cao, Y., Wang, Z., Wallbank, J. R., Holwill, M., Khanin, Yu. N., Morozov, S. V., Watanabe, K., Taniguchi, T., Makarovsky, O., Fromhold, T. M., Patanè, A., Geim, A. K., Fal'ko, V. I., Novoselov, K. S., Eaves, L.
Publikováno v:
Communications Physics 1, 94 (2018)
Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant
Externí odkaz:
http://arxiv.org/abs/1810.01312
Autor:
Khanin, Yu. N.1 (AUTHOR), Vdovin, E. E.1 (AUTHOR), Morozov, S. V.1 (AUTHOR), Novoselov, K. S.2 (AUTHOR) vdov62@yandex.ru
Publikováno v:
JETP Letters. Sep2023, Vol. 118 Issue 6, p433-438. 6p.
Autor:
Vdovin, E. E., Mishchenko, A., Greenaway, M. T., Zhu, M. J., Ghazaryan, D., Misra, A., Cao, Y., Morozov, S. V., Makarovsky, O., Patanè, A., Slotman, G. J., Katsnelson, M. I., Geim, A. K., Novoselov, K. S., Eaves, L.
Publikováno v:
Phys. Rev. Lett. 116, 186603 (2016)
We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between $\sim$10 and 200 mV. We attribute them to electron tunneling ass
Externí odkaz:
http://arxiv.org/abs/1512.02143
Autor:
Greenaway, M. T., Vdovin, E. E., Mishchenko, A., Makarovsky, O., Patanè, A., Wallbank, J. R., Cao, Y., Kretinin, A. V., Zhu, M. J., Morozov, S. V., Fal'ko, V. I., Novoselov, K. S., Geim, A. K., Fromhold, T. M., Eaves, L.
Publikováno v:
Nature Physics 11, 1057-1062 (2015)
A new class of multilayered functional materials has recently emerged in which the component atomic layers are held together by weak van der Waals forces that preserve the structural integrity and physical properties of each layer. An exemplar of suc
Externí odkaz:
http://arxiv.org/abs/1509.06208
Autor:
Mishchenko, A., Tu, J. S., Cao, Y., Gorbachev, R. V., Wallbank, J. R., Greenaway, M. T., Morozov, V. E., Morozov, S. V., Zhu, M. J., Wong, S. L., Withers, F., Woods, C. R., Kim, Y. -J., Watanabe, K., Taniguchi, T., Vdovin, E. E., Makarovsky, O., Fromhold, T. M., Falko, V. I., Geim, A. K., Eaves, L., Novoselov, K. S.
Publikováno v:
Nature Nanotechnology 9, 808-813 (2014)
Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the reali
Externí odkaz:
http://arxiv.org/abs/1409.2263
Publikováno v:
Physical Review B 79 (2009) 193311
We show that the resonant tunnel current through a single energy level of an individual quantum dot within an ensemble of dots is strongly sensitive to photoexcited holes that become bound in the close vicinity of the dot. The presence of these holes
Externí odkaz:
http://arxiv.org/abs/0907.1454
Autor:
Vdovin, E. E., Khanin, Yu. N., Makarovsky, O., Patane, A., Eaves, L., Henini, M., Mellor, C. J., Benedict, K. A., Airey, R.
We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magneti
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703614
Autor:
Wehling, T. O., Novoselov, K. S., Morozov, S. V., Vdovin, E. E., Katsnelson, M. I., Geim, A. K., Lichtenstein, A. I.
Publikováno v:
Nano Lett. 8; 173-177 (2008) (revised version, there)
Graphene, a one-atom thick zero gap semiconductor [1, 2], has been attracting an increasing interest due to its remarkable physical properties ranging from an electron spectrum resembling relativistic dynamics [3-12] to ballistic transport under ambi
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703390
We use magnetotunneling spectroscopy to observe the spin splitting of the ground state of an X-valley-related Si-donor impurity in an AlAs barrier. We determine the absolute magnitude of the effective Zeeman spin splitting factors of the impurity gro
Externí odkaz:
http://arxiv.org/abs/cond-mat/0502266