Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Vaya, P. R."'
Publikováno v:
Journal of Applied Physics; 8/15/1988, Vol. 64 Issue 4, p1922, 5p, 1 Chart, 6 Graphs
Autor:
Ramachandran, V., Vaya, P. R.
Publikováno v:
Journal of Applied Physics; Sep1983, Vol. 54 Issue 9, p5385-5393, 9p
Publikováno v:
Scopus-Elsevier
The aim of the present work is to grow compressive strained InGaAs/GaAs quantum well structures and study energy levels in them. Multiple layers of 20 InGaAs/GaAs quantum wells were grown by MBE. The energy for the C1-HH1 transition of the grown stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::bc13d5702d848f36602fbe5e5b7d8398
https://igi.indrastra.com/items/show/72228
https://igi.indrastra.com/items/show/72228
Publikováno v:
Fiber & Integrated Optics; Sep2001, Vol. 20 Issue 5, p525-534, 10p, 2 Diagrams, 1 Chart, 6 Graphs
Publikováno v:
Fiber & Integrated Optics; Mar2001, Vol. 20 Issue 2, p159-169, 11p
Publikováno v:
Global Trends in Computing & Communication Systems; 2012, p322-328, 7p
Publikováno v:
Global Trends in Computing & Communication Systems; 2012, p300-307, 8p
Publikováno v:
3rd International Conference on Trendz in Information Sciences & Computing (TISC2011); 1/ 1/2011, p194-198, 5p
Publikováno v:
3rd International Conference on Trendz in Information Sciences & Computing (TISC2011); 1/ 1/2011, p160-163, 4p
Publikováno v:
India Conference (INDICON), 2011 Annual IEEE; 2011, p1-4, 4p