Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Vaughn R. Deline"'
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:Q24-Q34
While using Cu electroplating to metallize silicon cells is of great interest, the long term reliability of such cells have not been well understood. In this paper silicon solar cells metallized with electroplated Cu were thermally stressed. The cell
Autor:
Lubomyr T. Romankiw, Hariklia Deligianni, Shafaat Ahmed, Tayfun Gokmen, Yu Zhu, Oki Gunawan, Vaughn R. Deline, Lian Guo
Publikováno v:
Progress in Photovoltaics: Research and Applications. 22:58-68
High performance Cu2ZnSnSe4 (CZTSe) photovoltaic materials were synthesized by electrodeposition of metal stack precursors followed by selenization. A champion solar cell with 7.0% efficiency is demonstrated. This is the highest efficiency among all
Autor:
Qiang Huang, Marinus Hopstaken, Cyril Cabral, Eva E. Simonyi, Vaughn R. Deline, Brett Baker-O'Neal
Publikováno v:
Journal of The Electrochemical Society. 160:D3045-D3050
Cu films with low impurities were electroplated on pure Cu, CuCo alloy and electrodeposited Co seed layers to study the room temperature grain growth behavior. As-evaporated Cu and CuCo alloy seed layers showed a significant enhancement effect on the
Autor:
Robert L. Bruce, Vaughn R. Deline, Sampath Purushothaman, Theo J. Frot, Teddie Magbitang, Willi Volksen, Geraud Dubois, Dolores C. Miller
Publikováno v:
Advanced Functional Materials. 22:3043-3050
Increasing the porosity of oxycarbosilane dielectrics is a key approach to lower the interconnect signal delay and thus enable manufacturing of lower power consumption and higher performance microprocessors. However, this path leads to excessive diel
Autor:
Oki Gunawan, Kathleen B. Reuter, David B. Mitzi, Qing Cao, Vaughn R. Deline, Matthew Copel, S. Jay Chey
Publikováno v:
Advanced Energy Materials. 1:845-853
Understanding defects in Cu(In,Ga)(Se,S)2 (CIGS), especially correlating changes in the film formation process with differences in material properties, photovoltaic (PV) device performance, and defect levels extracted from admittance spectroscopy, is
Publikováno v:
Thin Solid Films. 519:852-856
Application of the Sb-doping method to low-temperature (≤ 400 °C) processing of CuIn1 − xGaxSe2 − ySy (CIGS) solar cells is explored, using a hydrazine-based approach to deposit the absorber films. Power conversion efficiencies of 10.5% and 8.
Autor:
Vaughn R. Deline, Andrew J. Kellock, Min Yuan, A. G. Schrott, Wei Liu, David B. Mitzi, S. Jay Chey
Publikováno v:
Advanced Materials. 20:3657-3662
Autor:
Geraud Dubois, Victor Y. Lee, Phillip J. Brock, Reinhold H. Dauskardt, Willi Volksen, Markus D. Ong, Robert D. Miller, Vaughn R. Deline
Publikováno v:
Advanced Materials. 20:3159-3164
Publikováno v:
Macromolecules. 40:7505-7512
A photochemical path for formation of volatile S and acidolytic paths for formation of volatile Si and/or C during exposure to ultraviolet light have been identified for two silicon-containing bilayer photoresists using atmospheric pressure ionizatio
Publikováno v:
Chemistry of Materials. 22:285-287
This communication discusses grain size enhancement in CIGS thin films induced by Sb-doping and demonstrates consequent photovoltaic (PV) device performance improvement in CIGS-based solar cells. The chemical-doping approach also shows promise in ena